Speaker
Prof.
Valeri Saveliev
(National Research Nuclear University)
Description
Proposed Si tracking detector consists of aligned microcells on top and bottom of semiconductor wafer. Microcells are operated in breakdown mode and intrinsic gain of amplification can reach extremely high values up to 10^6. High intrinsic gain gives the possibility dramatically reduce the necessary thickness of sensitive area and total thickness of the detector up to few microns. The size of microcells can be varied from ~5 to 100 microns. The technology of such Si structure allowed implementation the electronics elements on the same substrate as the detection elements. Two aligned microcells are connected to one logic element and to the well known readout schematic as for active pixel detectors.
In the report will be shown the experimental prove of the principle.
Author
Prof.
Valeri Saveliev
(National Research Nuclear University)
Co-author
Dr
Nicola D'Ascenzo
(National Research Nuclear University)
