Speaker
Miguel Martins
(IST/INESC MN)
Description
$\beta$-Ga$_2$O$_3$ has a very wide bandgap and can be exfoliated into membranes of nanometric thicknesses. For these reasons, a doped $\beta$-Ga$_2$O$_3$ nanomembrane can potentially be used to fabricate highly sensitive field effect transistors or charged molecule sensors. First, the fabrication of membranes through ion implantation will be studied. The next step is the optimization of a back-gate transistor based on this material, before switching to a top-gate geometry, which can more easily be adapted into a sensor.
Author
Miguel Martins
(IST/INESC MN)