17–19 Nov 2010
CERN
Europe/Zurich timezone

Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS Upgrade

18 Nov 2010, 14:00
20m
503/1-001 - Council Chamber (CERN)

503/1-001 - Council Chamber

CERN

162
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Speaker

Christian Gallrapp (CERN)

Description

Silicon n-in-p pixel detectors from the latest CiS production are detectors similar to ones from the latest ATLAS pixel production. First measurements of irradiated CiS n-in-p single chip assemblies (SCA) connected to the current ATLAS front end chip FE-I3 were performed during the last weeks. Characterization results will be presented from devices irradiated with protons and neutrons up to fluences of 10E15 n_eq, as well as results from test beam studies at the CERN H6B area. An outlook on the ongoing irradiation program and the upcoming analysis steps will summarize the talk.

Author

Co-authors

Alessandro La Rosa (CERN) Anna Macchiolo (Max-Planck-Institut für Physik) Heinz Pernegger (CERN) Michael Beimforde (Max-Planck-Institut für Physik) Philipp Weigell (Max-Planck-Institut für Physik) Rainer Richter (MPI-Halbleiterlabor) Richard Nisius (Max-Planck-Institut für Physik)

Presentation materials