Speaker
Michael Koehler
(Freiburg University)
Description
Double-sided 3D silicon strip detectors, manufactured by CNM on p-type and n-type substrate, were measured after irradiation with sLHC strip- and pixel fluences. The device irradiations were performed at the proton cyclotron in Karlsruhe with 25 MeV protons. Results of measurements with a beta source and an infrared laser will be shown. After a radiation fluence of 2E16 n_eq/cm^2, the highest fluence studied, the detector on n-type substrate (p+ in n) yields a signal comparable to that of the detector processed on p-type substrate (n+ in p). A relative CCE of more than 50 % can be reached. The influence of different temperatures on signal, noise and charge multiplication will be discussed.
Author
Michael Koehler
(Freiburg University)
