17–19 Nov 2010
CERN
Europe/Zurich timezone

TCAD simulation of Si crystal with different clusters.

17 Nov 2010, 14:30
20m
503/1-001 - Council Chamber (CERN)

503/1-001 - Council Chamber

CERN

162
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Speaker

Prof. Juozas Vaitkus (Vilnius University)

Description

The TCAD Synopsis program was used for: 1) investigation of electric field distribution in Si crystal containing different types and concentration of clusters; 2) analysis of dynamics of electric field around the cluster during and after excitation by a short light pulse. An aim of presentation is an attraction of proposals to model the behavior of semiconductor in other situations.

Author

Prof. Juozas Vaitkus (Vilnius University)

Co-authors

Dr Ernestas Zasinas (Vilnius university) Mr Rokas Bondzinskas (Vilnius university)

Presentation materials