17–19 Nov 2010
CERN
Europe/Zurich timezone

Properties of a new series of Hamamatsu Si diodes

17 Nov 2010, 14:50
20m
503/1-001 - Council Chamber (CERN)

503/1-001 - Council Chamber

CERN

162
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Speaker

Prof. Juozas Vaitkus (Vilnius University)

Description

A new series of diodes FZ-Si (Hamamatsu) investigated by: 1) a standar technique (I(V) and C(V)); 2) by microwave photoconductivity decay measurement; 3) the response on the linear front bias pulse technique (BELIV); 4) the photoconductivity specra in the extrinsic region. Measurements performed at room a tat low temperature. The results are compared with the similar measurements in other supplier and in irradiated samples.

Author

Prof. Juozas Vaitkus (Vilnius University)

Co-authors

Mr Arunas Velicka (Vilnius University) Mr Aurimas Uleckas (Vilnius University) Dr Eugenijus Gaubas (Vilnius University) Mr Jurij Kusakovskij (Vilnius University) Mr Kestutis Zilinskas (Vilnius University) Mr Neimantas Vainorius (Vilnius University) Mr Tomas Ceponis (Vilnius University) Prof. Vaidotas Kazukauskas (Vilnius University)

Presentation materials