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17th RD50 Workshop (CERN)

17–19 Nov 2010
CERN
Europe/Zurich timezone

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Session

Defect and Material Characterization

17 Nov 2010, 13:50
503/1-001 - Council Chamber (CERN)

503/1-001 - Council Chamber

CERN

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Conveners

Defect and Material Characterization

  • Mara Bruzzi (INFN and University of Florence)

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  1. 8. Optical studies of defect centers formed in MCz-Si and FZ-Si by high-fluence neutron irradiation
    Barbara Surma (Institute of Electronic Materials Technology)
    17/11/2010, 13:50
    Photoluminescence (PL) and infrared absorption (IRA) techniques have been applied to study defect centers formed in MCz and FZ by high-fluence neutron irradiation. The MCz-Si and FZ-Si samples prepared by the WODEAN group were irradiated with neutron fluences ranging from 1x10^14 to 3x10^16 cm^-2. The studies were performed in a temperature range of 13 K–100 K using both the as-irradiated...
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  2. 11. New results on the annealing behaviour of the E4/E5-defect
    Alexandra Junkes (Universität Hamburg)
    17/11/2010, 14:10
    This work deals with the bistable congurations of the E4/E5-defect levels, which are known to be the important current generator after neutrons and charged hadrons irradiation. We studied 300 um thick n-type diodes made from MCz and FZ-silicon after irradiation with reactor neutrons. Capacitance-Deep Level Transient Spectroscopy (C-DLTS) as well as Capacitance- Voltage and Current-Voltage...
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  3. 13. TCAD simulation of Si crystal with different clusters.
    Prof. Juozas Vaitkus (Vilnius University)
    17/11/2010, 14:30
    The TCAD Synopsis program was used for: 1) investigation of electric field distribution in Si crystal containing different types and concentration of clusters; 2) analysis of dynamics of electric field around the cluster during and after excitation by a short light pulse. An aim of presentation is an attraction of proposals to model the behavior of semiconductor in other situations.
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  4. 12. Properties of a new series of Hamamatsu Si diodes
    Prof. Juozas Vaitkus (Vilnius University)
    17/11/2010, 14:50
    A new series of diodes FZ-Si (Hamamatsu) investigated by: 1) a standar technique (I(V) and C(V)); 2) by microwave photoconductivity decay measurement; 3) the response on the linear front bias pulse technique (BELIV); 4) the photoconductivity specra in the extrinsic region. Measurements performed at room a tat low temperature. The results are compared with the similar measurements in other...
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  5. 1. Annealing Effects on Depletion Voltage and Capacitance of Float Zone and Magnetic Czochralski Silicon Diodes After 800 MeV Proton Exposure
    Dr Konstantin Toms (University of New Mexico)
    17/11/2010, 15:10
    The radiation damage effects on p- and n-type Float Zone (FZ) and Magnetic Czochralski (MCz) Silicon diodes were characterized by studying the capacitance and depletion voltage. The diodes were exposed to 800 MeV protons to fluences up to $1.5x10^{15}$ p/cm^2. The diodes were then annealed at 60 °C and measured at various intervals up to 1,000 minutes. The intent of this study is to...
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  6. 25. Reverse current of heavily irradiated silicon detectors operated in the avalanche mode
    Vladimir Eremin
    17/11/2010, 16:00
    The high concentration of radiation induced defects in the detector bulk is the key factor of detector parameters stabilization at very high biase voltage. In this presentation the effect of deep levels on the detector reverse current is considered and the calculated I-V characteristics are compared with the experimental ones.
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  7. 20. Discussion on Defect and Material Characterization and Pad Detector Characterization
    Eckhart Fretwurst (II. Institut fuer Experimentalphysik), Prof. Mara Bruzzi (INFN and University of Florence)
    17/11/2010, 16:20
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