Conveners
Defect and Material Characterization
- Mara Bruzzi (INFN and University of Florence)
Barbara Surma
(Institute of Electronic Materials Technology)
17/11/2010, 13:50
Photoluminescence (PL) and infrared absorption (IRA) techniques have been applied to study defect centers formed in MCz and FZ by high-fluence neutron irradiation. The MCz-Si and FZ-Si samples prepared by the WODEAN group were irradiated with neutron fluences ranging from 1x10^14 to 3x10^16 cm^-2. The studies were performed in a temperature range of 13 K–100 K using both the as-irradiated...
Alexandra Junkes
(Universität Hamburg)
17/11/2010, 14:10
This work deals with the bistable congurations of the E4/E5-defect levels, which are known to be the important current generator after neutrons and charged hadrons irradiation. We studied 300 um thick n-type diodes made from MCz and FZ-silicon after irradiation with reactor neutrons. Capacitance-Deep Level Transient Spectroscopy (C-DLTS) as well as Capacitance- Voltage and Current-Voltage...
Prof.
Juozas Vaitkus
(Vilnius University)
17/11/2010, 14:30
The TCAD Synopsis program was used for: 1) investigation of electric field distribution in Si crystal containing different types and concentration of clusters; 2) analysis of dynamics of electric field around the cluster during and after excitation by a short light pulse. An aim of presentation is an attraction of proposals to model the behavior of semiconductor in other situations.
Prof.
Juozas Vaitkus
(Vilnius University)
17/11/2010, 14:50
A new series of diodes FZ-Si (Hamamatsu) investigated by: 1) a standar technique (I(V) and C(V)); 2) by microwave photoconductivity decay measurement; 3) the response on the linear front bias pulse technique (BELIV); 4) the photoconductivity specra in the extrinsic region. Measurements performed at room a tat low temperature. The results are compared with the similar measurements in other...
Dr
Konstantin Toms
(University of New Mexico)
17/11/2010, 15:10
The radiation damage effects on p- and n-type Float Zone (FZ) and Magnetic Czochralski (MCz) Silicon diodes were characterized by studying the capacitance and depletion voltage. The diodes were exposed to 800 MeV protons
to fluences up to $1.5x10^{15}$ p/cm^2. The diodes were then annealed at 60 °C and measured at various intervals up to 1,000 minutes. The intent of this study is to...
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik), Prof.
Mara Bruzzi
(INFN and University of Florence)
17/11/2010, 16:20
