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8th RD50 Workshop

25–28 Jun 2006
Prague
Europe/Zurich timezone

Contribution List

53 out of 53 displayed
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  1. 16. Visit to the old city of Prague
    25/06/2006, 15:00
    Meeting point: Workshop site (see Workshop homepage)
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  2. 17. Visit to a brewery (U Vejvodů)
    25/06/2006, 18:00
  3. 4. Welcome at the CTU Prague
    Prof. František Hrdlička (Dean of Faculty of Mechanical Engineering, CTU Prague)
    26/06/2006, 09:00
  4. 5. Welcome by RD50 Co-Spokespersons
    Mara Bruzzi (INFN and University of Florence), Michael Moll (CERN)
    26/06/2006, 09:10
  5. 8. Defect kinetics in Epi/Cz silicon after Co60-gamma irradiation
    Ioana Pintilie (NIMP Bucharest)
    26/06/2006, 09:20
    I.Pintilie (a,b), E. Fretwurst (b), F. Hoeniger (b), G. Lindstroem (b) and B. G. Svensson (c) (a) National Institute of Materials Physics, Bucharest-Romania, (b) Institute for Experimental Physics-Hamburg University, (c) Oslo University, Dept. of Physics,
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  6. 9. Characterization of irradiated silicon structures by microwave absorption techniques
    Eugenijus Gaubas (Vilnius)
    26/06/2006, 09:40
    E.Gaubas, J.Vaitkus Vilnius university
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  7. 18. DLTS measurements of Epitaxial and MCZ silicon detectors after 26 MeV proton irradiation
    Frank Hoeniger (Hamburg University)
    26/06/2006, 10:30
    F. Hönniger(a), A. Furgeri(b), E. Fretwurst(a), G. Lindström(a), I. Pintilie(c), Institutes : (a) Institute for Experimental Physics, University of Hamburg (b) Institut fuer Experimentelle Kernphysik,University of Karlsruhe (c) National Institute for Materials Physics, Bucharest
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  8. 3. Discussion on Defect and Material Characterization
    26/06/2006, 10:50
  9. 49. Evaluation of the Radiation Tolerance of IBM SiGe Heterojunction Bipolar Transistors Under Gamma Source Irradiation
    Jessica Metcalfe (University of California Santa Cruz)
    26/06/2006, 11:20
    J. Metcalfe, D.E. Dorfan, A. A. Grillo, A. Jones, F. Martinez-McKinney, P. Mekhedjian, M. Mendoza, M. Rogers, H.F.-W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder; J.D. Cressler, G. Prakash, A. Sutton; R. Hackenburg, J. Kierstead, S. Rescia Santa Cruz Institute for Particle Physics, University of California Santa Cruz; School of Electrical and Computer Engineering, Georgia Institute...
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  10. 33. Radiation Tests on SiGe Technologies for the Front-End Detector Readout in the S-LHC
    Miguel Ullán (CNM-IMB (CSIC), Barcelona)
    26/06/2006, 11:40
    M. Ullán(1), S. Díez(1), F. Campabadal(1), M. Lozano(1), G. Pellegrini(1), D. Knoll(2), B. Heinemann(2) (1) CNM-IMB (CSIC), Barcelona (2) IHP Microelectronics, Frankfurt(Oder), Germany
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  11. 48. Characterization of irradiated MOS-C with X-Ray by using CV-Measurement and gated diode technique
    Qingyu Wei (Max-Planck-Institut Munich)
    26/06/2006, 13:15
    Q. Wei, L. Andricek, H-G. Moser, R.H. Richter Max-Planck-Institute for Physics Semiconductor Laboratory
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  12. 30. Gamma Irradiation of SMART MOS capacitors and Interstrip capacitance test structures
    Hartmut Sadrozinski (SCIPP)
    26/06/2006, 13:35
    Hartmut F.-W. Sadrozinski, C. Betancourt, R. Heffern, I. Henderson, J. Pixley, A. Polyakov,M. Wilder and G.-F. Dalla Betta and the SMART Collaboration SCIPP, UC Santa Cruz DIT, Università di Trento,
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  13. 32. Sensor simulation and position calibration for the CMS Pixel Detector
    Vincenzo Chiochia (University of Zurich)
    26/06/2006, 13:55
    V.Chiochia, M.Swartz, E.Alagoz University of Zurich, Paul Scherrer Institut, Johns Hopkins University
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  14. 35. Simulations Of Laser In Silicon Detectors.
    Peter Kodys (CTU)
    26/06/2006, 14:15
    Zbynek Drasal, Zdenek Dolezal, Peter Kodys, Pavel Reznicek IPNP, Charles University, Prague
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  15. 36. Tests Of Laser In Silicon Detectors.
    Peter Kodys (CTU Prague)
    26/06/2006, 14:30
    Peter Kodys, Zdenek Dolezal, Zbynek Drasal, Pavel Reznicek IPNP, Charles University
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  16. 38. Status and first results of an IR-lasertester setup in Freiburg
    Thies Ehrich (University of Freiburg)
    26/06/2006, 15:15
    T. Ehrich 1, M. Boscardin 3, G.-F. Dalla Betta 3, S. Eckert 1, J. Härkönen 2, K. Jakobs 1, S. Kühn 1, P. Luukka 2, M. Maassen 1, U. Parzefall 1, C. Piemonte 3, A. Pozza 3, S. Ronchin 3, E. Tuovinen 2, N. Zorzi 3. 1 University of Freiburg, 2 HIP, Helsinki, 3 ITC-irst, Trento
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  17. 37. Prototype module characterization with a beta source setup in Freiburg
    Susanne Kuehn (University of Freiburg)
    26/06/2006, 15:35
    S. Kühn 1, M. Boscardin 3, G.-F. Dalla Betta 3, S. Eckert 1, T. Ehrich 1, J. Härkönen 2, K. Jakobs 1, P. Luukka 2, M. Maassen 1, U. Parzefall 1, C. Piemonte 3, A. Pozza 3, S. Ronchin 3, E. Tuovinen 2, N. Zorzi 3. 1 University of Freiburg, 2 HIP, Helsinki, 3 ITC-irst, Trento
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  18. 34. Development of Moderated p-spray Isolation Techniques for P-type Detectors at CNM.
    Manuel Lozano (CNM-IMB (CSIC), Barcelona)
    26/06/2006, 15:55
    M. Lozano(1), C. Fleta(1)(*), G. Pellegrini(1), F. Campabadal(1), J. M. Rafí(1), M. Ullán(1), S. Martí(2), M. Miñano(2) (1) CNM-IMB (CSIC), Barcelona, Spain (2) IFIC (CSIC), Valencia, Spain (*) Currently at University of Glasgow, UK
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  19. 55. The Helsinki Beam Telescope
    Panja Luukka (HIP)
    26/06/2006, 16:15
  20. 54. Freiburg fan ins
    Simon Eckert (Uni Freiburg)
    26/06/2006, 16:30
  21. 31. Status of the RD50 6 inch wafer Production
    Hartmut Sadrozinski (SCIPP)
    26/06/2006, 16:45
    Hartmut Sadrozinski SCIPP, UC Santa Cruz
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  22. 43. Discussion session on Full Detector Systems
    26/06/2006, 17:05
  23. 11. Status report on new epi-devices
    Eckhart Fretwurst (Inst. for Exp. Phys., University of Hamburg)
    27/06/2006, 09:00
    E. Fretwurst(a), A. Barcz(b), A. Furgeri(c), G. Lindström(a), F. Hönniger(a), G. Kramberger(d), E. Nossarzewska(e), I. Pintilie(f), R. Röder(g) (a) Institute for Experimental Physics, University of Hamburg (b) ITE Institute of Electron Technology, Warsaw (c) Institut fuer Experimentelle Kernphysik,University of Karlsruhe (d) Jozef Stefan Institute, University of Ljubljana (e) ITME...
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  24. 20. Measurement of Trapping Time Constants in Neutron Irradiated Pad Detectors
    Jens Weber (Universität Dortmund)
    27/06/2006, 09:20
    Jens Weber, Reiner Klingnberg Experimentelle Physik IV Universität Dortmund
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  25. 21. Annealing studies of effective trapping times in silicon detectors
    Matej Batic (Jozef Stefan Institute)
    27/06/2006, 09:40
    M. Batič, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik Jozef Stefan Institute
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  26. 24. Recent CCE measurements with neutron irradiated epi-Si pad detectors
    Gregor Kramberger (Jozef Stefan Instutute, Ljubljana)
    27/06/2006, 10:00
    V. Cindro, E. Fretwurst, V. Khomenkov, G. Kramberger, G. Lindstroem, I. Mandić, M. Mikuž, M. Zavrtanik, Jozef Stefan Institute, University of Hamburg, INFN Padova
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  27. 22. Study of radiation damage induced by protons and neutrons on heavily irradiated Magnetic Czochralski and Epitaxial silicon detectors
    Norman Manna (INFN Bari)
    27/06/2006, 10:50
    Manna Norman and SMART collaboration INFN Bari, Pisa, Firenze, Trento, Padova
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  28. 23. Trapping of electrons and holes in p-type silicon irradiated with neutrons
    Vladimir Cindro (Jožef Stefan Institute, Ljubljana, Slovenia)
    27/06/2006, 11:10
    V.Cindro1, G. Kramberger1, M. Lozano2, I. Mandić1, M. Mikuž1,3, G. Pellegrini2, J. Pulko1, M. Ullan2, M. Zavrtanik2 1-Jožef Stefan Institute, Ljubljana, Slovenia 2-Instituto de Microelectrónica de Barcelona, CNM-IMB (CSIC), Barcelona Spain 3-Faculty for Mathematics and Physics, University of Ljubljana, Slovenia
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  29. 25. Long term annealing of neutron irradiated detectors evaluated at LHC operational temperatures
    Elena Verbitskaya (Ioffe Physico-Technical Institute RAS)
    27/06/2006, 11:30
    E. Verbitskaya1, V. Eremin1, I. Ilyashenko1, Z. Li2, J. Härkönen3, V. Cindro4 1 Ioffe Physico-Technical Institute RAS 2 Brookhaven National Laboratory 3 Helsinki Institute of Physics 4 Jožef Stefan Institute, Ljubljana
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  30. 19. CV and CCE characterization of p-type MCZ Material
    Herbert Hoedlmoser (CERN)
    27/06/2006, 12:10
    Herbert Hoedlmoser, Michael Moll (CERN)
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  31. 44. Discussion session on Defect Engineering and Pad Detector Characterization
    27/06/2006, 14:00
  32. 39. Development of New 3d Si detectors at BNL and CNM
    Zheng Li (BNL)
    27/06/2006, 15:00
    Z. Li1, W. Chen1, Y.H. Guo1, D. Lissauer1, D. Lynn1, V. Radeka1, M. Lozano2, G. Pellegrini2 1Brookhaven National Laboratory, Upton, NY 11973-5000, USA 2 Centro Nacional de Microelectrónica, Campus Universidad Autónoma de Barcelona, 08193 Bellaterra (Barcelona), Spain
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  33. 40. Progress on 3D mask
    Richard Bates (Glasgow University)
    27/06/2006, 15:50
    R. Bates, G. Pellegrini Glasgow, CNM
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  34. 52. 3D detectors simulation and measurements
    Celeste Fleta
    27/06/2006, 16:05
    Celeste Fleta (Glasgow)
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  35. 41. Position sensitive TCT measurements with 3D-sct detectors
    Gregor Kramberger (Jozef Stefan Instutute, Ljubljana)
    27/06/2006, 16:20
    V. Cindro, G. Kramberger, J. Langus, I. Mandić, M. Mikuž, M. Zavrtanik, M. Boscardin, G.F. Dalla Betta, C. Piemonte, A. Pozza, S. Ronchin, N. Zorzi Jozef Stefan Institute, IRST Trento
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  36. 42. Characterisation of Irradiated 3D Detectors
    Martin Hoeferkamp (University of New Mexico)
    27/06/2006, 16:40
    Martin Hoeferkamp, Sally Seidel, Igor Gorelov University of New Mexico
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  37. 51. Charge Collection in single-column 3D detectors
    Hartmut Sadrozinski (SCIPP), Hartmut Sadrozinski (SCIPP)
    27/06/2006, 17:00
    Firenze, UC Santa Cruz and ITC-irst
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  38. 45. Discussion session on New Structures
    27/06/2006, 17:15
  39. 47. NIKHEF activities and infrastructure
    Fred Hartjes (NIKHEF)
    27/06/2006, 17:40
  40. 53. CB discussions
    27/06/2006, 17:55
  41. 28. I-V & CCE results of neutron irradiated GaN Schottky Detectors
    James Grant (University of Glasgow)
    28/06/2006, 09:00
    J. Grant (1), R. Bates (1), W. Cunningham (1), A. Blue (1), J. Vaitkus (2), E. Gaubas (2), V. OShea (1) (1) Dept. of Physics & Astronomy, University of Glasgow, Glasgow, G12 8QQ, Scotland (2) Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9 -lll, 2040, Vilnius, Lithuania
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  42. 12. Properties of irradiated semi-insulating GaN
    Juozas Vaitkus (Vilnius University)
    28/06/2006, 09:20
    J.Vaitkus (1), J.P.Grant (2), E.Gaubas (1), V.Kazukauskas(1), V.Kalendra(1), G.Pobedinskas(1), S.Sakai (3), J.Storasta(1) Institute of Materials Science and Applied Research, (1) Vilnius University, Sauletekio 9-III, Vilnius, Lithuania; (2) Dept. Physics and Astronomy, Glasgow University, Glasgow, Scotland, UV; (3) Dept. Engineering, Tokushima University, Tokushima, Japan.
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  43. 10. KINETICS OF INTERSTITIAL CARBON ANNEALING AND MONITORING OF OXYGEN DISTRIBUTION IN SILICON PARTICLE DETECTORS
    Leonid Makarenko (Belarusian State University)
    28/06/2006, 09:40
    L.F. Makarenko*, M. Moll**, F.P. Korshunov***, S.B. Lastovski***, L.I. Murin*** * Belarusian State University, Minsk, Belarus **CERN, Geneva, Switzerland ***Institute of Solid State and Semiconductor Physics, Minsk, Belarus
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  44. 13. CHARACTERIZATION OF DEFECTS WITH SMALL CAPTURE CROSS-SECTION IN DETECTOR-GRADE SILICON BY DLTS and LAPLACE-DLTS
    Leonid Makarenko (Belarusian State University)
    28/06/2006, 10:00
    L.F. Makarenko*, J. Evans-Freeman**, V.P. Markevich***, S.B. Lastovski**** * Belarusian State University, Minsk, Belarus **Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield, UK ***School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK ****Institute of Solid State and Semiconductor Physics, Minsk, Belarus
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  45. 50. Annealing of the vacancy-oxygen and divacancy-oxygen complexes in silicon
    Eduard Monakhov
    28/06/2006, 10:50
    M. Mikelsen (1), E. V. Monakhov (1), B. S. Avset (2), B. G. Svensson(1) (1) Department of Physics, Physical Electronics, University of Oslo (2) SINTEF ICT, P.O. Box 124 Blindern, N-0314 Oslo, Norway
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  46. 14. The influence of growth conditions on irradiation induced defects in 4H-SiC
    Ioana Pintilie (NIMP Bucharest)
    28/06/2006, 11:10
    I.Pintilie (a,b), B. G. Svensson (b), K. Irmscher (c), U. Grössner (b) and B. Thomas (d) (a) National Institute of Materials Physics, Bucharest-Romania, (b) Oslo University, Dept. of Physics, P.B. 1048 Blindern, N-0316, Oslo, Norway (c) Institut für Kristallzüchtung im Forschungsverbund Berlin e.V., D 12489 Berlin, Germany (d) SiCED Electronics Development GmbH&Co. KG, D 91052...
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  47. 15. Deep levels induced by very high dose neutron irradiation in 4H-SiC
    Filippo Fabbri (Department of Physics, University of Bologna)
    28/06/2006, 11:30
    A.Castaldini, A.Cavallini, F.Fabbri, F.Nava, P.Errani, V.Cindro Department of Physics University of Bologna Department of Physics University of Modena
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  48. 27. Annealing effects on p+n junction 4H-SiC diodes after very high neutron irradiation
    Francesco Moscatelli (IMM-CNR)
    28/06/2006, 11:50
    Francesco Moscatelli 1,3*, Andrea Scorzoni 2,1,3, Antonella Poggi 1, Mara Bruzzi 4, Silvio Sciortino 4, Stefano Lagomarsino 4, I. Mandic 5 and Roberta Nipoti 1 1 CNR- IMM Sezione di Bologna, via Gobetti 101, 40129 Bologna, Italy 2 DIEI , Università di Perugia, via G. Duranti 93, 06125 Perugia, Italy 3 INFN of Perugia, via Pascoli 1, 06123 Perugia, Italy 4 Dipartimento di Fisica, Polo...
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  49. 46. Discussion session on New Materials
    28/06/2006, 12:10
  50. 1. antother test
  51. 2. Discussion: Defect Engineering
    Eckhart Fretwurst (Hamburg University)
  52. 0. test
    test
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  53. 6. test

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