8th RD50 Workshop

Session

Defect and Material Characterization

26 Jun 2006, 09:20

Prague

8. Defect kinetics in Epi/Cz silicon after Co60-gamma irradiation

Ioana Pintilie (NIMP Bucharest)

26/06/2006, 09:20

I.Pintilie (a,b), E. Fretwurst (b), F. Hoeniger (b), G. Lindstroem (b) and B. G. Svensson (c) (a) National Institute of Materials Physics, Bucharest-Romania, (b) Institute for Experimental Physics-Hamburg University, (c) Oslo University, Dept. of Physics,

9. Characterization of irradiated silicon structures by microwave absorption techniques

Eugenijus Gaubas (Vilnius)

26/06/2006, 09:40

E.Gaubas, J.Vaitkus Vilnius university

18. DLTS measurements of Epitaxial and MCZ silicon detectors after 26 MeV proton irradiation

Frank Hoeniger (Hamburg University)

26/06/2006, 10:30

F. Hönniger(a), A. Furgeri(b), E. Fretwurst(a), G. Lindström(a), I. Pintilie(c), Institutes : (a) Institute for Experimental Physics, University of Hamburg (b) Institut fuer Experimentelle Kernphysik,University of Karlsruhe (c) National Institute for Materials Physics, Bucharest

3. Discussion on Defect and Material Characterization

26/06/2006, 10:50