8th RD50 Workshop

Session

New Materials

7

28 Jun 2006, 09:00

Prague

28. I-V & CCE results of neutron irradiated GaN Schottky Detectors

James Grant (University of Glasgow)

28/06/2006, 09:00

J. Grant (1), R. Bates (1), W. Cunningham (1), A. Blue (1), J. Vaitkus (2), E. Gaubas (2), V. OShea (1) (1) Dept. of Physics & Astronomy, University of Glasgow, Glasgow, G12 8QQ, Scotland (2) Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9 -lll, 2040, Vilnius, Lithuania

12. Properties of irradiated semi-insulating GaN

Juozas Vaitkus (Vilnius University)

28/06/2006, 09:20

J.Vaitkus (1), J.P.Grant (2), E.Gaubas (1), V.Kazukauskas(1), V.Kalendra(1), G.Pobedinskas(1), S.Sakai (3), J.Storasta(1) Institute of Materials Science and Applied Research, (1) Vilnius University, Sauletekio 9-III, Vilnius, Lithuania; (2) Dept. Physics and Astronomy, Glasgow University, Glasgow, Scotland, UV; (3) Dept. Engineering, Tokushima University, Tokushima, Japan.

10. KINETICS OF INTERSTITIAL CARBON ANNEALING AND MONITORING OF OXYGEN DISTRIBUTION IN SILICON PARTICLE DETECTORS

Leonid Makarenko (Belarusian State University)

28/06/2006, 09:40

L.F. Makarenko*, M. Moll**, F.P. Korshunov***, S.B. Lastovski***, L.I. Murin*** * Belarusian State University, Minsk, Belarus **CERN, Geneva, Switzerland ***Institute of Solid State and Semiconductor Physics, Minsk, Belarus

13. CHARACTERIZATION OF DEFECTS WITH SMALL CAPTURE CROSS-SECTION IN DETECTOR-GRADE SILICON BY DLTS and LAPLACE-DLTS

Leonid Makarenko (Belarusian State University)

28/06/2006, 10:00

L.F. Makarenko*, J. Evans-Freeman**, V.P. Markevich***, S.B. Lastovski**** * Belarusian State University, Minsk, Belarus **Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield, UK ***School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK ****Institute of Solid State and Semiconductor Physics, Minsk, Belarus

50. Annealing of the vacancy-oxygen and divacancy-oxygen complexes in silicon

Eduard Monakhov

28/06/2006, 10:50

M. Mikelsen (1), E. V. Monakhov (1), B. S. Avset (2), B. G. Svensson(1) (1) Department of Physics, Physical Electronics, University of Oslo (2) SINTEF ICT, P.O. Box 124 Blindern, N-0314 Oslo, Norway

14. The influence of growth conditions on irradiation induced defects in 4H-SiC

Ioana Pintilie (NIMP Bucharest)

28/06/2006, 11:10

I.Pintilie (a,b), B. G. Svensson (b), K. Irmscher (c), U. Grössner (b) and B. Thomas (d) (a) National Institute of Materials Physics, Bucharest-Romania, (b) Oslo University, Dept. of Physics, P.B. 1048 Blindern, N-0316, Oslo, Norway (c) Institut für Kristallzüchtung im Forschungsverbund Berlin e.V., D 12489 Berlin, Germany (d) SiCED Electronics Development GmbH&Co. KG, D 91052...

15. Deep levels induced by very high dose neutron irradiation in 4H-SiC

Filippo Fabbri (Department of Physics, University of Bologna)

28/06/2006, 11:30

A.Castaldini, A.Cavallini, F.Fabbri, F.Nava, P.Errani, V.Cindro Department of Physics University of Bologna Department of Physics University of Modena

27. Annealing effects on p+n junction 4H-SiC diodes after very high neutron irradiation

Francesco Moscatelli (IMM-CNR)

28/06/2006, 11:50

Francesco Moscatelli 1,3*, Andrea Scorzoni 2,1,3, Antonella Poggi 1, Mara Bruzzi 4, Silvio Sciortino 4, Stefano Lagomarsino 4, I. Mandic 5 and Roberta Nipoti 1 1 CNR- IMM Sezione di Bologna, via Gobetti 101, 40129 Bologna, Italy 2 DIEI , Università di Perugia, via G. Duranti 93, 06125 Perugia, Italy 3 INFN of Perugia, via Pascoli 1, 06123 Perugia, Italy 4 Dipartimento di Fisica, Polo...

46. Discussion session on New Materials

28/06/2006, 12:10