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12:00
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Registration & Refreshment
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12:30
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Introduction
(until 13:00)
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12:30
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Institutional welcome from CERN
-
Enrico Chesta
(CERN)
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12:35
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Industrial activities at RADNEXT and introduction to the workshop
-
Ennio Tito Capria
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12:45
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Institutional welcome from the RADECS association
-
Francoise Bezerra
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12:50
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Introduction to RADNEXT
-
Ruben Garcia Alia
(CERN)
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13:00
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Keynote Talk
(until 13:30)
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13:00
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Keynote Talk 1: Radiation Effects on Electronics lessons learnt from Accelerators Facilities
-
Ruben Garcia Alia
(CERN)
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13:30
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Introduction to Session 1
(until 13:35)
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13:30
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Session 1: Industry-relevant results gained from RADNEXT Transnational Access
-
Salvatore Fiore
(CERN)
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13:35
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Session 1: Calibration of the deposited energy in CMOS imagers for particle detection on nanosatellites
-
Josua Florczak
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13:55
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Session 1: High energy ion beam benchmarks for dosimetry and radiation effects
-
Natalia Emriskova
(CERN)
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14:15
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Session 1: Pulsed X-Rays for SEE pre-qualification of COTS
-
Samuel Dubos
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14:35
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Session 1: Characterizing Neutron Induced Errors on RISC-V Processors for Safety-critical Applications
-
Fernando Fernandes dos Santos
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14:55
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Session 1: SEE testing of GaN power transistors with high energy hadrons
-
Mario Sacristan Barbero
(Univ. Montpellier - CERN)
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15:15
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Session 1: Ground SEE testing of LEON5/NOEL-V demonstrator chip in European deep-submicron technology
-
Ádria Barros de Oliveira
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15:35
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Discussion
(until 15:55)
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15:55
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--- Coffee break ---
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16:25
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Introduction to Session 2
(until 16:30)
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16:25
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Session 2: Young professionals from academia and industry
- Dr
renaud mangeret
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16:30
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Session 2: Development of a static and dynamic test bench for testing GaN HEMT power components in harsh environments
-
Marc Orsatelli
(CEA)
Cyril Chabot
(CEA)
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16:48
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Session 2: Characterization technique for irradiated SiC power MOSFETs
-
Corinna Martinella
(ETH Zurich - APS Laboratory)
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17:06
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Session 2: Design of SEE-Immune Silicon Carbide Power Devices for High Power Space Applications
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Arijit Sengupta
(Vanderbilt University)
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17:24
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Session 2: Pre-qualification of COTS to Single Event Latchup using a pulsed laser
-
Samuel Dubos
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17:42
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Session 2: Improvement of SEB Threshold in β-Ga2O3 Schottky Diodes
-
Sajal Islam
(Vanderbilt University)
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18:00
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Announcement
(until 18:05)
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18:00
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Announcement & Closing 1st Day
-
Ennio Tito Capria
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18:30
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Networking Buffet
(until 21:00)
(Glassbox, Restaurant 1)
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