Speaker
Description
Magnetic Tunneling Junctions (MTJs) are fundamental components of spintronics, offering high sensitivity to magnetic fields and many potential applications. However, these devices are susceptible to various noise sources, the most problematic being the so-called 1/f noise that is particularly detrimental to device performance at low frequencies.
1/f noise is ubiquitous in electronic devices and has been extensively studied in many conventional electronic components. Even in semiconductors, its origins and dependence on materials and device geometry remain controversial. The origins of this noise in MTJs remain even less clear than in non-magnetic semiconductor devices.
The goal of this project is to do a systematic investigation of 1/f noise in MTJs, which crucial to unveil its underlying mechanisms allowing for the development of effective noise mitigation strategies and enhancing the reliability of MTJ-based technologies.
