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09:00
Four-quadrant Si and SiC Photodiodes for Beam Position and Monitor Applications
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Joan Marc Rafí
(Instituto de Microelectrónica de Barcelona, CNM-CSIC)
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09:20
Thermal Annealing of Electron, Neutron and Proton Irradiation Effects on SiC Radiation Detectors
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Joan Marc Rafí
(Instituto de Microelectrónica de Barcelona, CNM-CSIC)
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09:40
Defect Spectroscopy on Proton Irradiated 4H Silicon Carbide Devices
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Niels Sorgenfrei
(Albert Ludwigs Universitaet Freiburg (DE))
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10:00
TCAD simulation of 4H silicon carbide LGADs
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Philipp Gaggl
(Austrian Academy of Sciences (AT))
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10:20
Charge Collection Study of SiC-LGAD - SICAR1
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Xin Shi
(Chinese Academy of Sciences (CN))
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10:40
Discussion: SiC
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Thomas Bergauer
(Austrian Academy of Sciences (AT))