Speaker
Maria Bernard-Schwarz
(Austrian Academy of Sciences (AT))
Description
For the high-luminosity phase of LHC a campaign within CMS started to investigate different technologies. Therefore 6'' silicon wafers were ordered at HPK to answer question e.g. radiation tolerance and annealing behavior of different sensor material. The testing variety concern sensor versions n-in-p and p-in-n in thicknesses from 50µm to 300µm. In terms of sensor material the difference between floatzone, magnetic Czochralski and epitaxial grown silicon is investigated. For the n-in-p sensors also different isolation technology p-stop and p-spray are tested. The wafer consists of test- structures, diodes, mini-sensors, long and very short strip sensors, real pixel sensors and double metal routing. The irradiation is done with mixed fluences of protons and neutrons which represents the hadrons that are expected in the CMS tracker after the LHC upgrade. This contribution presents an overview of the different technologies of non-irradiated test structures and also the results after irradiation.
Author
Maria Bernard-Schwarz
(Austrian Academy of Sciences (AT))
