8th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Taipei, Taiwan

3D slim edge silicon sensors: processing, yield and QA for the ATLAS IBL production

5 Dec 2011, 11:10

20m

Activity Center (Academia Sinica)

ORAL Simulations and Manufacturing Simulations and Manufacturing

Speaker

Dr Cinzia Da Via (School of Physics and Astronomy,The University of Manchester UK)

Description

3D silicon sensors with double side etched electrodes and dimensions compatible to the ~4cm2 FE-I4 ATLAS pixel front-end chips, started their production for one of the LHC experiment’s upgrades in 2013. The Insertable b-Layer (IBL) is a single additional pixel layer which will be inserted within the existing pixel detectors in the ATLAS experiment. This paper will describe the strategy which allowed the transition of 3D technology from R&D to industrialization, will present the sensors technical specifications, selection criteria, QA and yield in the current production and discuss performance after bump-bonding with front-end chips and irradiation up to 5x1015 ncm-2.

Presentation materials

Slides

1205_DaVia_HSTD-8-DaVia.pdf