Speaker
Ryo Nagai
(Tokyo Institute of Technology (JP))
Description
A new type of pixel sensors, n-in-p type, is being developed in order to cope with the particle fluence of 1-3x10^16 1-MeV neutron-equivalent particles/cm^2 in the LHC upgrade (HL-LHC). The n-in-p pixel sensors are ones for the present front-end chip (FE-I3) of the ATLAS detector and the others for the new front-end chip (FE-I4) for the higher occupancy in the HL-LHC. They are made in a p-bulk silicon wafer, planar in geometry, with biasing structures with polysilicon or punch-thru resistance, with isolation structures with p-stops, and a thickness of 320 or 150 µm. The charge collection efficiencies and the performance of the structures before and after irradiation were evaluated by using pion beam of 120 GeV at CERN super proton synchrotron (SPS).
Author
Ryo Nagai
(Tokyo Institute of Technology (JP))
Co-author
Y.Unno, Y.Takubo, Y.Ikegami, N.Kimura, T.Kondo, R.Takashima, J.Tojo, S.Terada, K.Nagai, I.Nakano, K.Hanagaki, K.Hara, K.Yorita O.Jinnouchi
(Tokyo Institute of Technology, others)
