Speaker
Marc Christophersen
(US Naval Research Laboratory)
Description
We report on a low-cost and flexible implementation of so-called "slim-edges" useful in many applications in high-radiation instrumentation with possible extension into large-scale application of semiconductor sensors in other fields. Post-production treatment affords flexibility and optimization in the sensor application. Future industrialization will be easy since these methods have been developed and proven in the photovoltaic industry.
The method combines preparing a high-quality edge produced by laser scribing followed by cleaving, minimizing the edge current. This low damage surface is then coated with a suitable dielectric having the appropriate interface charge in a low-temperature ALD process. This interface charge will shape the field at the edge. We will show results on the cleaving process with distances to the active area of 14 μm; on the deposition of Si-oxide for n-type sensors; and on the deposition of alumina for p-type sensors. The silicon oxides are deposited by PECVD (plasma enhanced chemical vapor deposition), and we used ALD (atomic layer deposition) for the alumina films. We will discuss details of the treatment process, the influence of the deposition temperatures, the use of commercial cleaving methods, and the effects of elevated temperature annealing after deposition. Irradiations with ionizing and displacing radiation have been performed and their effects will be shown.
Author
Marc Christophersen
(US Naval Research Laboratory)
Co-authors
Bernard Phlips
(US Naval Research Laboratory)
Hartmut F.-W. Sadrozinski
(anta Cruz Institute for Particle Physics, University of California Santa Cruz)
Vitaliy Fadeyev
(Santa Cruz Institute for Particle Physics, University of California Santa Cruz)
