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8th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Taipei, Taiwan

5–8 Dec 2011
Academia Sinica
ROC timezone

Session

Simulations and Manufacturing

1
5 Dec 2011, 09:10
Activity Center (Academia Sinica)

Activity Center

Academia Sinica

128 Academia Road, Section 2, Nankang, Taipei 115, Taiwan

Conveners

Simulations and Manufacturing

  • Suen Hou (Academia Sinica (TW))

Simulations and Manufacturing

  • Takashi Ohsugi (Hiroshima University)

Presentation materials

There are no materials yet.

  1. 8. Silicon Sensors for High-Radiation Tracking Detectors – RD50 Status Report
    Alexandra junkes (universität hamburg)
    05/12/2011, 09:10
    Simulations and Manufacturing
    ORAL
    It is foreseen to significantly increase the luminosity of CERN’s Large Hadron Collider (LHC) by upgrading the LHC towards the HL-LHC (High Luminosity LHC) in order to harvest the maximum physics potential of the machine. Especially the final upgrade (Phase-II Upgrade) foreseen for 2021 will mean unprecedented radiation levels, exceeding the LHC fluences by roughly an order of magnitude. Due...
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  2. 3. Complete suppression of reverse annealing of neutron radiation damage during active gamma irradiation in MCZ Si detectors
    Zheng Li (BNL)
    05/12/2011, 09:40
    Simulations and Manufacturing
    ORAL
    For the development of radiation-hard Si detectors for the SiD BeamCal program for International Linear Collider (ILC), n-type Magnetic Czochralski Si detectors have been irradiated first by fast neutrons to fluences of 1.5x1014 and 3x1014 neq/cm2, and then by gamma up to 500 Mrad. The motivation of this mixed radiation project is to develop a radiation-hard Si detector that can utilize the...
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  3. 60. New results of charge multiplication in irradiated segmented silicon detectors with special strip processing
    Dr Gianluigi Casse (University of Liverpool (GB))
    05/12/2011, 10:00
    Simulations and Manufacturing
    ORAL
    The charge multiplication in severely irradiated silicon detectors is now a well proven effect that enhances the charge collection of silicon sensors making them able to operate up to at the doses anticipated for future super-colliders (like the high luminosity LHC at CERN). The effect is well documented but not completely understood. The multiplication is caused by impact ionisation due to...
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  4. 15. Alumina and silicon oxide side wall passivations for p- and n-type sensors
    Marc Christophersen (US Naval Research Laboratory)
    05/12/2011, 10:20
    Simulations and Manufacturing
    ORAL
    We report on a low-cost and flexible implementation of so-called "slim-edges" useful in many applications in high-radiation instrumentation with possible extension into large-scale application of semiconductor sensors in other fields. Post-production treatment affords flexibility and optimization in the sensor application. Future industrialization will be easy since these methods have been...
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  5. 9. 3D slim edge silicon sensors: processing, yield and QA for the ATLAS IBL production
    Dr Cinzia Da Via (School of Physics and Astronomy,The University of Manchester UK)
    05/12/2011, 11:10
    Simulations and Manufacturing
    ORAL
    3D silicon sensors with double side etched electrodes and dimensions compatible to the ~4cm2 FE-I4 ATLAS pixel front-end chips, started their production for one of the LHC experiment’s upgrades in 2013. The Insertable b-Layer (IBL) is a single additional pixel layer which will be inserted within the existing pixel detectors in the ATLAS experiment. This paper will describe the strategy which...
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  6. 29. Impact of the layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK
    Mr Marco Povoli (University of Trento and INFN Trento, Italy)
    05/12/2011, 11:30
    Simulations and Manufacturing
    ORAL
    In the past few years important progress has been made in the development of 3D silicon radiation detectors due to the anticipated installation schedule of the ATLAS Insertable B Layer during the first long shut down of the LHC in 2013-2014. Three competing technologies have been evaluated for the IBL sensor production, namely silicon planar and 3D sensors, and diamond sensors. Within the...
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  7. 22. Status of 3D double sided detector fabrications and their applications at CNM-IMB
    Dr Giulio Pellegrini (IMB-CNM-CSIC Barcelona)
    05/12/2011, 11:50
    Simulations and Manufacturing
    ORAL
    Silicon detectors cylindrical electrodes (so called 3D detectors) offer advantages over standard planar photodiodes as more radiation hard radiation sensors. 3D detectors with the double sided geometry have been fabricated at CNM clean room facilities. Different geometries including pixel detectors for high energy physics experiment and synchrotron imaging , short strip detectors with the...
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  8. 50. Monolithic and hybrid pixel sensors in vertically integrated CMOS technology for vertexing applications
    Dr Lodovico Ratti (INFN Pavia)
    05/12/2011, 12:10
    Simulations and Manufacturing
    ORAL
    Experiments at the future high luminosity colliders (like ILC, SuperB and SLHC) will set severe requirements on each of the parts making up the silicon vertex tracker (SVT), including the detector (i.e., the sensitive silicon volume) and the readout electronics. In order to separate the very dense particle jets emerging from the interaction region, the first detector layer will be placed very...
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