2–6 Dec 2024
CERN
Europe/Zurich timezone

Research on graphene-optimized silicon carbide detector

5 Dec 2024, 09:20
20m
4/3-006 - TH Conference Room (CERN)

4/3-006 - TH Conference Room

CERN

110
Show room on map
WG6 - Wide bandgap materials WG6 - WBG sensors

Speaker

Dr Wang Congcong (Institute of High Energy Physics, Chinese Academy of Sciences)

Description

Silicon carbide as wide band-gap semiconductor, has physical characteristics of wide bandgap, excellent carrier mobility, higher breakdown electric field, higher thermal conductivity and higher saturated drift velocity compared with silicon. However, the existing 4H-SiC radiation detectors all use metal electrodes, which are easy to produce structural defects after metal electrode irradiation, thus seriously reducing the mechanical and physical properties of the material. Therefore, the application of silicon carbide detector in the field of nuclear detection and heavy ion detector is limited. Graphene has the advantages of zero band-gap, high carrier mobility, high conductivity and anti-irradiation, which provides a new idea for demetallization of particle detector electrodes. A graphene-optimized silicon carbide detector was developed and its electrical properties and charge collection properties were studied. The experimental results predict that the graphene-optimized silicon carbide detector can improve the charge collection speed and time resolution of the detector.

Type of presentation (in-person/online) online presentation (zoom)
Type of presentation (I. scientific results or II. project proposal) II. Presentation on project proposal

Author

Dr Wang Congcong (Institute of High Energy Physics, Chinese Academy of Sciences)

Co-authors

Mr Jiang Zhenyu (Institute of High Energy Physics, Chinese Academy of Sciences) Keqi Wang (Institute of High Energy, CAS) Dr Suyu Xiao (Shandong Institute of Advanced Technology, Jinan, China) Xin Shi (Institute of High Energy, CAS) Xiyuan Zhang (Chinese Academy of Sciences (CN))

Presentation materials