Speaker
Description
We present the research activities within the DRD3 project proposal “Radiation damage in Boron-doped Silicon diodes and LGAD sensors”, relevant to understanding radiation damage in silicon. One of the main objectives is the defect characterization at microscopic level in boron doped silicon subject to extreme irradiation fluences (2x10$^{16}$ n$_{\rm eq}$/cm$^2$) and establish the role of B, C, O and P impurities in the formation of electrically active defects. The theoretical investigations shall be focused on establishing the likely defect configuration, potential metastabilities and electronic structure. To this end, we employ molecular dynamics simulations using LAMMPS software to obtain the vacancy and extrinsic impurity dynamics and to describe the metastability of defect configurations. Furthermore, selected defect configurations (e.g. silicon di-, trivacancy + extrinsic impurities) shall be investigated by ab initio density functional theory (DFT) calculations, which will provide the impact in the density of states, p- and n-type character and formation energies of the considered complex defects. These theoretical results come in support of experimental studies focused on DLTS and TSC/TSCap on irradiated silicon samples, and contribute to the research goals WG3-RG3.2, concerning the development of radiation damage models of point and cluster defects and WG4-RG3.2, by supplying information for TCAD and MC simulations.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | II. Presentation on project proposal |
