Speaker
Description
The RD50-MPW4, the latest HV-CMOS pixel sensor of the former CERN-RD50-CMOS group, enhances radiation tolerance, granularity, and timing resolution for future experiments like the HL-LHC and FCC. Fabricated by LFoundry in December 2023 using a 150nm CMOS process, it features a 64 x 64 pixel matrix with a $62 \times 62 \mu m^2$ pitch and employs a column-drain readout architecture. The previous model, RD50-MPW3, faced noise coupling issues between the digital periphery and pixels, limiting threshold settings to $\gtrsim 5 ke^-$ and restricting operation to the matrix’s top half.
The RD50-MPW4 addresses these issues by separating power domains for the digital and analog components, allowing more sensitive threshold settings and enabling full matrix operation. A new backside biasing scheme and improved guard ring structure further support bias voltages up to 500V, enhancing radiation hardness.
Tests with unirradiated samples showed >99.9% efficiency, ~16 $\mu m$ spatial resolution, and ~$10 ns$ timing resolution. Several samples were irradiated at JSI to fluences from $10^{14}$ to $10^{16} n_{eq}/cm^2$. This presentation covers IV measurements and injection scans at varying temperatures before and after annealing, along with results from the latest test beam campaign at DESY, comparing irradiated and non-irradiated samples and demonstrating the sensor’s suitability for high-radiation environments.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
