Speaker
Dr
Ivan Vila Alvarez
(Instituto de Física de Cantabria (CSIC-UC))
Description
We demonstrate the application of the Three-Photon Absorption Transient Current Technique (3PA-TCT) for the characterization of silicon carbide (SiC) p-in-n diodes with an active thickness of 50 µm, manufactured at IMB-CNM. The characterization was performed at the laser facility of the University of the Basque Country (UPV-EHU), utilizing advanced nonlinear optical techniques to achieve localized charge generation with high spatial resolution. This advancement highlights the potential of 3PA-TCT as a powerful tool for the precise characterization of wide-band semiconductor radiation detectors and other semiconductor devices.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
Authors
Cristian Quintana San Emeterio
(Universidad de Cantabria and CSIC (ES))
Diego Rosich Velarde
(Universidad de Cantabria and CSIC (ES))
Dr
Ivan Vila Alvarez
(Instituto de Física de Cantabria (CSIC-UC))
Dr
Jordi Duarte Campderros
(IFCA (UC-CSIC))
Marcos Fernandez Garcia
(Universidad de Cantabria and CSIC (ES))
Raul Montero
