Conveners
WG3 - Radiation Damage: WG3 - Radiation Damage
- Joern Schwandt (Hamburg University (DE))
- Ioana Pintilie (National Inst. of Materials Physics (RO))
Owing to their timing capabilities, of the order of 50 ps or better for MIP, Low Gain Avalanche Detector (LGAD) have been chosen for next-generation timing detectors at the HL-LHC and other high-energy physics experiments. Both ATLAS and CMS collaborations have adopted them as baseline sensors for the High Granularity Timing Detector (HGTD) and MIP Timing Detector (MTD) in their...
The carrier recombination properties of semiconductors are critically influenced by defect species introduced by irradiations. In particle detectors, a reduction in carrier lifetime correlates with the degradation of charge collection efficiency and with an increase of leakage current. To develop radiation hard particle sensors and to predict variations of sensor functional parameters with...
We present the research activities within the DRD3 project proposal “Radiation damage in Boron-doped Silicon diodes and LGAD sensors”, relevant to understanding radiation damage in silicon. One of the main objectives is the defect characterization at microscopic level in boron doped silicon subject to extreme irradiation fluences (2x10$^{16}$ n$_{\rm eq}$/cm$^2$) and establish the role of B,...
With the upgrade of the LHC to the High-Luminosity LHC (HL-LHC), the Inner Detector will be replaced with the new all-silicon ATLAS Inner Tracker (ITk) to maintain tracking performance in a high-occupancy environment and to cope with the increase in the integrated radiation dose.
Comprising an active area of 165m$^2$, the outer four layers in the barrel and six disks in the endcap region...
The unparalleled sensitivity achieved with skipper CCDs, coupled with ultra-pure high-resistivity substrates (>22 kOhm×cm) and cryogenic operation, has rekindled interest in this technology for low-background experiments (DAMIC@SNOLAB, DAMIC-M, SENSEI, and OSCURA) Such devices offer sub-electron noise resolution, enabling the detection of extremely low-energy interactions critical for...
To meet the high radiation hardness and timing resolution requirements of high-energy physics experiments, we present an initial investigation into double-sided 3D sensors with various geometrical structures developed by CNM. We evaluated their electrical performance through I-V and C-V measurements and compared the results with TCAD Silvaco simulations and theoretical estimations. Initial...
Kevin Lauer,$^{1,2}$ Katharina Peh,$^{2}$ Dirk Schulze,$^{2}$ Stefan Krischok,$^{2}$ Mario Bähr,$^{1}$ Richard Grabs,$^{1}$ Frank Long,$^{1,3}$ Martin Kaleta,$^{1}$ Andreas Frank$^{1}$ and Thomas Ortlepp$^{1}$
$^{1}$CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
$^{2}$Technische Universität Ilmenau, Institut für Physik, Weimarer Str. 32, 98693...
Updates on the ongoing activities of the Partial Activation of Boron (PAB) common project will be given.
An update on the recent progress from the investigation on thin silicon sensors for extreme fluences will be given.
Results from thin sensors with and without gain will be presented and an overview of future developments will be discussed.
To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High-Luminosity LHC phase, the CMS collaboration will replace the current calorimeter endcaps with the new High-Granularity Calorimeter (HGCAL) concept. It will facilitate the use of particle-flow calorimetry with its unprecedented transverse and longitudinal readout/trigger segmentation,...
The introduction of carbon doping in Low Gain Avalanche Detectors (LGADs) has been shown to effectively mitigate neutron-irradiation-induced acceptor removal effects. However, the microscopic mechanism behind this phenomenon remains unclear. In this study, Monte Carlo (MC) simulations model the effects of 1 MeV neutrons in critical regions in LGAD, providing data on the energy and spectrum of...
We will present an overview of the on-going investigations of radiation induced defects in Si and SiC sensors performed within WG3 group.
Characterization measurements of $25~\mathrm{\mu m} \times 25~\mathrm{\mu m}$ pitch 3D silicon sensors are performed, for devices with active thickness of $150~\mu$m. Evidence of charge multiplication caused by impact ionization below the breakdown voltage is observed in sensors operated at $-45~^\circ\mathrm{C}$. Small-pitch 3D silicon sensors have potential as high precision 4D tracking...
