2–6 Jun 2025
Nikhef, Amsterdam
Europe/Amsterdam timezone

Research on Performance and Applications of SiC on RASER

5 Jun 2025, 10:55
20m
Nikhef, Amsterdam

Nikhef, Amsterdam

WG4 - Simulations WG4 - Simulations

Speaker

Suyu Xiao (Shandong Institute of Advanced Technology, China)

Description

RASER is a self-developed semiconductor simulation software. It can simulate semiconductor devices of silicon and silicon carbide in planar and 3D structures, obtaining key parameters. Recently, it has been optimized. It successfully simulated important electrical properties of SiC LGAD, verifying the gain layer model. The simulation of the deep-level compensation model of SiC detectors after proton irradiation validated the irradiation model. It also achieved simplified simulation of SiC strip detectors and estimated their resolution. In detector application simulation, it was used for the design and simulation of SiC detectors in CEPC and CSNS luminosity detection, providing data for performance evaluation and design optimization.

Type of presentation (in-person/online) in-person presentation
Type of presentation (I. scientific results or II. project proposal) I. Presentation on scientific results

Author

Suyu Xiao (Shandong Institute of Advanced Technology, China)

Co-author

Xin Shi (Chinese Academy of Sciences (CN))

Presentation materials