Speaker
Description
Silicon 3D Detector has demonstrated excellent performance, especially after high fluence irradiation, it has been running successfully on ATLAS Detector since 2015. In addition, it has also attracted investigations in other fields, astronomy, microdosimetry, medical imaging, etc. A novel 3D-Trench sensor has been designed and fabricated at the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) using the 8 inch CMOS process technology. In the first batch, an ultra-narrow etch width of 0.5 µm and ultra-high depth-to-width ratio of 70:1 have been achieved. This talk will present its design, fabrication and the preliminary measurement results of Current-Voltage (IV), Capacitance-Voltage (CV), Charge Collection Efficiency (CCE) and Timing Performance before irradiation. In addition, another novel design of double-sided 3D trench electrode detector (DS-3DTED) structure will also be presented. The device’s electrical characterizations, including electrostatic potential and electric field distributions, I–V, C–V, full depletion voltage and transient current with x-ray incidence, are performed with TCAD tools. A 311 μm deep trench has been achieved through the Bosch process on the IMECAS. The maximum depth-to-width ratio is close to 105:1 when the trench width is 2 μm, which is an excellent foundation for manufacturing future 3D detector with a large fill factor and small dead region.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
