2–6 Jun 2025
Nikhef, Amsterdam
Europe/Amsterdam timezone

Technological developments and performance of n-type Low Gain Avalanche Detectors (nLGAD) at IMB-CNM

4 Jun 2025, 16:15
20m
Nikhef, Amsterdam

Nikhef, Amsterdam

WG2 - Hybrid silicon sensors WG2/WP2 - Hybrid Silicon Technologies

Speaker

Pablo Fernandez-Martinez (IMB-CNM, CSIC)

Description

Low Gain Avalanche Detectors built on high resistivity n-type substrates (nLGAD) have emerged as a suitable alternative to conventional p-type sensors for low penetrating radiation detection. The Radiation Detectors Group of the IMB-CNM has been exploring the potentialities of this technology since 2020, mainly working within the framework of the CERN’s RD50 collaboration and several national and international projects.
This contribution aims at summarizing the progress of the nLGAD technology in the IMB-CNM facilities, with an emphasis on the latest experimental results, as well as the technological challenges and the envisioned future developments and applications.

Type of presentation (in-person/online) in-person presentation
Type of presentation (I. scientific results or II. project proposal) I. Presentation on scientific results

Author

Co-authors

Dr Celeste Fleta (Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (ES)) Florent Dougados (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) Dr Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)) Mr Jairo Antonio Villegas Dominguez Milos Manojlovic (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) Neil Moffat (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) Dr Salvador Hidalgo (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))

Presentation materials