Speaker
Description
Silicon carbide (SiC) is a wide band gap semiconductor with strong potential for use in next-generation sensors for high-luminosity colliders. Its intrinsic properties enable reliable operation at elevated temperatures and significantly reduce the need for active cooling systems. Moreover, SiC is typically fabricated using chemical vapor deposition, a versatile technique that ensures good control over doping levels and material homogeneity.
In this study, unirradiated SiC diodes (PAD architecture) were investigated using Deep Level Transient Spectroscopy (DLTS) to identify and characterize electrically active defects. DLTS measurements were conducted over a broad temperature range (80 K to 700 K), allowing the detection of multiple defect levels with distinct activation energies and capture cross-sections.
The identification and characterization of these defect states provide critical insights into the intrinsic defect landscape of unirradiated SiC PAD devices. These findings serve as an essential baseline for understanding defect evolution under irradiation and contribute to the optimization of SiC-based device design for high-radiation environments.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
