Speaker
Yuta Okazaki
(KEK High Energy Accelerator Research Organization (JP))
Description
The development of monolithic CMOS silicon sensors with gain layers is actively being developed worldwide. In many gain-layer-equipped Monolithic Active Pixel Sensors (MAPS), the gain layer is implemented only in a limited region within each pixel, resulting in restricted charge multiplication areas. We are working toward the development of a new type of MAPS that features a gain layer covering the entire pixel area—similar to the concept of AC-LGADs—in order to achieve a uniform gain within each pixel. We will report on the results of TCAD simulations and the current status of sensor prototyping.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
Author
Yuta Okazaki
(KEK High Energy Accelerator Research Organization (JP))