3rd DRD3 week on Solid State Detectors R&D

Timing Measurements for 3D and LGAD Sensors Using ⁹⁰Sr

5 Jun 2025, 08:30

20m

Nikhef, Amsterdam

WG2 - Hybrid silicon sensors WG2/WP2 - Hybrid Silicon Technologies

Speaker

chuan liao (The High Energy Accelerator Research Organization)

Description

To evaluate the timing performance of the 3D detector, we developed a readout system for silicon detectors, taking inspiration from the Gali-66+ used by the Energy Frontier group in Japan. To better understand the working principle of a transimpedance amplifier (TIA) based on BJT transistors, we also referred to a TIA design developed by UCSC using a BFP840ESD (SiGe) transistor.
In this study, we used a ⁹⁰Sr source to generate signals in both 3D and AC-LGAD detectors. We first present the timing resolution results for the 3D and AC-LGAD detectors. Then, based on the basic amplification principle of the TIA, V=IR, we varied the resistance R to investigate its impact on the pulse maximum, rise time, and RMSD. These characteristics were analyzed for the BFP840ESD (SiGe)-based design and compared with the Gali-66+.
If you have any suggestions or questions, please let me know — any feedback is very welcome.

Presentation materials

DRD3-04-06-2025.pdf