A novel 3D-Trench silicon pixel sensor featuring an enclosed deep trench surrounding the central columnar cathode will be developed in this project, the pixel size ranges from 25ร25 ฮผm2 to 150ร150 ฮผm2. The fabrication will be performed on the 8-inch CMOS pilot line at the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS). To reduce the dead area in the 3D sensor, the...
This project aims at developing the next generation of 3D pixel sensors, further progressing in the
trend of decreasing pixel size which started with the ATLAS IBL and continued with the ATLAS ITk
and CMS Inner Tracker 3D pixels. Target applications are the possible Phase-3 upgrades of ATLAS
and CMS and the upgrade of LHCb VELO (with timing). Inherent to the 3D pixel architecture is...
Radiation tolerance of Low Gain Avalanche Detectors (LGADs) is one of the major challenges in the development of precise timing tracking detectors for future hadron collider experiments. A widely accepted hypothesis for accepter removal attributes the deactivation of implanted boron to the formation of boron-oxygen complexes, which introduce donor-like defect levels. To investigate the role of...
Trench-isolated (TI) LGADs, developed at FBK, are pixelated LGAD implementations where pads are separated by physical trenches etched within the silicon substrate and filled with a dielectric. Developed as an alternative approach to implant-based inter-pad separation (JTEs), this technology promises a dramatic reduction to dead regions, mitigating fill factor issues inherent to small-pitch...
In recent years, development of pixel detectors has evolved from only improving the spatial resolution to also improving the temporal resolution.
The ultimate goal is to develop a 4 Dimensional tracking (4D tracking) system capable of combining micrometer spatial resolution with a temporal resolution in the order of tens of picoseconds. Sensor types such as Low-Gain-Avalanche-Detectors...
Silicon 3D Detector has demonstrated excellent performance, especially after high fluence irradiation, it has been running successfully on ATLAS Detector since 2015. In addition, it has also attracted investigations in other fields, astronomy, microdosimetry, medical imaging, etc. A novel 3D-Trench sensor has been designed and fabricated at the Institute of Microelectronics of the Chinese...
Sensors with fast timing capabilities are a critical component for all future tracking detectors to disentangle high multiplicity events. Silicon 3D sensors utilize columns etched orthogonal to the sensor substrate as their readout electrodes, in contrast to regular, planar, detector technologies, where the electrodes are only found on the sensor surface. 3D sensors display, in addition to...
As part of the DRD3 project "Double-Sided 3D Detectors for Ultra-Radiation Hard Timing Applications," we present the designs and the initial timing characterization with TCT of double sided 3D sensors produced at IMB-CNM. We also outline the roadmap for upcoming studies, which include detailed electrical characterization and the selection of new devices for testing at the ELI Beamlines facility.
This contribution has three distinguished parts all devoted to understanding the timing parameters of 3D Si CNM sensors and artefacts affecting the TPA -TCT measurements.
In contrast to planar detectors, 3D Si Double Sided Double Column devices were designed with n and p columns etched through the bulk, minimizing charge drift distance and improving timing. However, the peculiar geometry...
4D-tracking is a highly relevant topic in the development of future tracking detectors for high-energy physics experiments. Among the most promising sensor technologies for tracking in 4 dimensions are Resistive Silicon Detectors (RSD), based on Low Gain Avalanche Diode (LGAD) technology, that aim to achieve a timing resolution of approximately 30 ps and a spatial resolution of the order of a...
Low Gain Avalanche Detectors (LGADs) are characterized by a fast rise time (~500ps) and extremely good time resolution (down to 17ps), and potential for a very high repetition rate with ~1 ns full charge collection. For the application of this technology to near future experiments such as e+e- Higgs factories (FCC-ee), the ePIC detector at the Electron-Ion Collider, or smaller experiments...
Low Gain Avalanche Diodes (LGADs) are a significant improvement upon standard silicon sensors because the gain layer provides timing resolution on the scale necessary to lend usage in environments such as the Large Hadron Collider (LHC) and accordingly form the backbone of timing layers present in the CMS and ATLAS phase 2 upgrades at the LHC. AC-coupled LGADs (AC-LGADs) allow charge sharing...
Resistive Silicon Devices (RSDs), particularly AC-coupled Low Gain Avalanche Diodes (AC-LGADs), open the path of pico second level space and time (4D) tracking in high-energy physics (HEP) experiments such as those at the Large Hadron Collider (LHC), Electron-Ion Collider (EIC), and future (lepton) colliders facilities. These sensors combine the fine spatial resolution of segmented detectors...
LGAD(Low Gain Avalanche Detector) is used in the HGTD(High Granularity Time Detector) of ATLAS phase II upgrade due to its excellent time resolution and spatial granularity. In order to utilize its high granularity advantage, it is necessary to bond the detector with a front-end readout chip of the same channel size using the flip chip process. The front-end readout chip is used to collect...
Low Gain Avalanche Detectors build on n-type substrate (nLGADs), developed by IMB-CNM, are optimized for the detection of low-penetrating particles such as soft X-rays, low-energy protons, and UV photons. Their design features a n-type gain layer that enables efficient charge multiplication for charge generation near the surface, making them suitable for applications in medicine, industry, and...
Low Gain Avalanche Detectors built on high resistivity n-type substrates (nLGAD) have emerged as a suitable alternative to conventional p-type sensors for low penetrating radiation detection. The Radiation Detectors Group of the IMB-CNM has been exploring the potentialities of this technology since 2020, mainly working within the framework of the CERNโs RD50 collaboration and several national...
One of the greatest milestones in scientific infrastructure in Brazil is concentrated in Sirius, installed at the Brazilian Center for Research in Energy and Materials (CNPEM), in Campinas. Just like the European Synchrotron Radiation Facility (ESRF), located in Grenoble, France, Sirius represents one of the most advanced fourth-generation synchrotron light sources in the world.
Both Sirius...
Silicon detectors with reduced inactive regions around their periphery are desirable for applications in high-energy physics, X-ray experiments, and medical imaging. Typically, an insensitive area is required to accommodate guard rings, which help maintain the electric field distribution around peripheral pixels and isolate defects at the physical edges of the detectors that could otherwise...
To evaluate the timing performance of the 3D detector, we developed a readout system for silicon detectors, taking inspiration from the Gali-66+ used by the Energy Frontier group in Japan. To better understand the working principle of a transimpedance amplifier (TIA) based on BJT transistors, we also referred to a TIA design developed by UCSC using a BFP840ESD (SiGe) transistor.
In this...
IMB-CNM has been a main actor in the development of Low Gain Avalanche Detectors since the initial device conception, more than a decade ago. In the last years, our efforts have been centred on developing new LGAD designs to enhance the device performance in aspects such as the charge collection efficiency or the improvement of the fill factor. At the same time, our technologies are being...
