The WEST superconducting tokamak in France features a full tungsten environment and is equipped with actively cooled walls providing valuable input for future operation of nuclear fusion reactors. Versatile multi-energy soft and hard x-ray pinhole cameras have been developed, calibrated, deployed and operated for long-pulse plasmas at WEST. These innovative imaging diagnostic leverages a...
Several irradiation campaigns using 23 GeV protons were conducted at the IRRAD facility at CERN, employing test structures from ATLAS1 wafers for the ATLAS ITk strip sensors. These campaigns aimed to study charge collection efficiency after irradiation. When irradiating with a narrow beam of high energy protons, various effects must be considered to accurately estimate the actual fluence and...
This contribution presents new insights into the elusive "X-defect", observed in Thermally Stimulated Current (TSC) measurements as a low-temperature shoulder to the BiOi defect in irradiated silicon diodes. Despite repeated observations, this defect has so far eluded assignment to a specific chemical structure.
A low-resistivity (10$\,\Omega$cm) p-type epitaxial silicon diode, irradiated...
Carrier recombination lifetime in semiconductor material is a key parameter influencing the performance of radiation detectors. This property is highly sensitive to the presence of radiation-induced defects, which act as recombination centres and significantly alter carrier lifetime. However, the nature and concentration of these defects can vary depending on the specific irradiation...
Silicon carbide (SiC) is a wide band gap semiconductor with strong potential for use in next-generation sensors for high-luminosity colliders. Its intrinsic properties enable reliable operation at elevated temperatures and significantly reduce the need for active cooling systems. Moreover, SiC is typically fabricated using chemical vapor deposition, a versatile technique that ensures good...
To handle the tenfold increase in radiation from the High-Luminosity LHC, CMS will
replace its endcap calorimeters with the High-Granularity Calorimeter (HGCAL).
Silicon pad sensors, covering an area of 620 m2 in the electromagnetic and
high-radiation hadronic regions, must withstand fluences of up to 1e16 neq/cm2.
They are fabricated on 8-inch p-type wafers with thicknesses of 120, 200,...
To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High Luminosity LHC, the CMS detector will replace the current endcap calorimeters (CE) with the new High Granularity Calorimeter (HGCAL). It will facilitate the use of particle flow calorimetry with its unprecedented transverse and longitudinal readout and trigger segmentation, with more...
Doping removal is a well-known consequence of radiation damage in silicon detectors and has likely become the primary effect since the introduction of Low-Gain Avalanche Diodes (LGADs). In standard n-in-p LGADs, acceptor removal degrades the timing performance after irradiation by decreasing the effective acceptor concentration in the gain implant. Furthermore, in next-generation LGADs—such as...
With the development of collider experiments, the demand for detectors with high time and spatial resolution increased. AC-LGADs have been investigated widely due to their excellent time and spatial resolution. However, radiation exposure may damage the N++ layer, thereby affecting the performance of AC-LGADs. We conducted a TID irradiation test on a 5.6 mm AC-LGAD strip designed by IHEP and...
Low gain avalanche detectors with DC- and AC-coupled readout were exposed to ionizing and non-ionizing radiation at levels relevant to future experiments in particle, nuclear, medical, and astrophysics. Damage-related change in their acceptor removal constants and inter-channel resistivity are reported.
Updates on the ongoing activities of the Partial Activation of Boron (PAB) common project will be given. Preliminary results will be shown. The schedule of the PAB batches from CNM and FBK will be discussed.
An update on the "Defect engineering in PAD diodes mimicking the gain layer in LGADs" project will be given.
