3rd DRD3 week on Solid State Detectors R&D

Session

WG4 - Simulations

5 Jun 2025, 09:30

Nikhef, Amsterdam

63. Simulation and design of IHEP AC-LGAD for timing tracker detector

Mei Zhao (Chinese Academy of Sciences (CN))

05/06/2025, 09:30

WG4 - Simulations

The AC-LGAD, functioning as a 4D detector, is capable of simultaneously delivering both timing and spatial information. Additionally, the strip AC-LGAD offers the advantage of reducing the number of readout channels while maintaining position resolution along the bending direction. This makes it an excellent candidate for timing tracker detectors in future colliders. However, the length of the...

28. Simulation of irradiated hybrid pixels modules at fluences expected at HL-LHC

Marco Bomben (APC & Université Paris Cité, Paris (FR))

05/06/2025, 09:50

WG4 - Simulations

Signal loss is the main limitation on tracking/vertexing performance due to radiation damage effect to hybrid pixel detectors when irradiated at fluences expected at High Luminosity LHC (HL-LHC).

It is important to have reliable predictions on the charge collection efficiency (CCE) performance after irradiation in order to predict operational voltage values and test tracking algorithms...

38. RASER - A python package for solid-state radiation detector simulation

Chenxi Fu (Chinese Academy of Sciences (CN))

05/06/2025, 10:10

WG4 - Simulations

The Python-based simulation package RASER (RAdiation SEmiconductoR) has been developed to advance semiconductor radiation detector research through integrated device-circuit simulation. The toolkit enables simulation-driven exploration of novel detector concepts through three core modeling dimensions: semiconductor material properties (including wide-bandgap compounds), customizable electrode...

6. Research on Performance and Applications of SiC on RASER

Suyu Xiao (Shandong Institute of Advanced Technology, China)

05/06/2025, 10:55

WG4 - Simulations

RASER is a self-developed semiconductor simulation software. It can simulate semiconductor devices of silicon and silicon carbide in planar and 3D structures, obtaining key parameters. Recently, it has been optimized. It successfully simulated important electrical properties of SiC LGAD, verifying the gain layer model. The simulation of the deep-level compensation model of SiC detectors after...

16. Allpix Squared 3.2 - Closing the Gap to IC Design

Simon Spannagel (Deutsches Elektronen-Synchrotron (DE))

05/06/2025, 11:15

WG4 - Simulations

Allpix Squared is a core infrastructure of DRD3 and provides a versatile open-source simulation framework for semiconductor detectors to the community. This contribution summarizes the improvements implemented over the past year and provides an overview of the features available in the most recent release version 3.2.

A special focus is given to the work concerning the closer integration of...

23. Simulations of Monolithic Active Pixel Sensors for the OCTOPUS Project

Gianpiero Vignola

05/06/2025, 11:35

WG4 - Simulations

The OCTOPUS (Optimized CMOS Technology for Precision in Ultra-thin Silicon) project, part of the DRD3 collaboration, aims to simulate, develop, and characterise fine-pitch monolithic sensors using the 65 nm TPSCo CMOS process. The project targets a spatial resolution of 3 µm, a temporal resolution below 5 ns, a material budget of 50 µm of silicon equivalent, and an average power consumption...

71. Simulation of narrow column 3D detectors – search for gain

Gregor Kramberger (Jozef Stefan Institute (SI))

05/06/2025, 11:55

WG4 - Simulations

Simulation of narrow column 3D detectors – search for gain
The 3D detectors with narrow and highly doped columns are most likely candidates for 3D devices with gain, similar to array of solid-state proportional wire tubes. 3D detectors with junction electrodes – n+ columns of <=1 um width could lead to gain depending on the width of the doping profile. Some initial performance simulation of...

50. Simulation of MAPS with uniform amplification factor

Yuta Okazaki (KEK High Energy Accelerator Research Organization (JP))

05/06/2025, 12:15

WG1 - Monolithic Sensors

The development of monolithic CMOS silicon sensors with gain layers is actively being developed worldwide. In many gain-layer-equipped Monolithic Active Pixel Sensors (MAPS), the gain layer is implemented only in a limited region within each pixel, resulting in restricted charge multiplication areas. We are working toward the development of a new type of MAPS that features a gain layer...

79. WG4 - Updates and Discussion

Håkan Wennlöf (Nikhef National institute for subatomic physics (NL)), Marco Mandurrino (Universita e INFN Torino (IT))

05/06/2025, 12:35

WG4 - Simulations