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15:00
|
Introduction
-
Marco Mandurrino
(Universita e INFN Torino (IT))
Håkan Wennlöf
(Nikhef National institute for subatomic physics (NL))
()
|
|
15:10
|
Updates on Simulations
(until 16:40)
()
|
|
15:10
|
CMOS simulation and connection between device-level and electronics simulations
()
|
|
15:25
|
Other detectors/technologies/activities
()
|
|
15:40
|
Newly measured semiconductor properties
-
Jürgen Burin
(Austrian Academy of Sciences (AT))
()
|
|
15:55
|
Radiation damage: validation with measurements and development of high-fluence models
()
|
|
16:10
|
Time dependent electric/weighting field
()
|
|
16:25
|
Simulation tools development
()
|
|
16:40
|
Discussion and AoB
-
Håkan Wennlöf
(Nikhef National institute for subatomic physics (NL))
Marco Mandurrino
(Universita e INFN Torino (IT))
()
|
