Speaker
Babken Semerjyan
(Yerevan State University, Institute of Physics)
Description
Semiconductor nuclear radiation detectors are mostly high-resistance. In order to use very high-resistance detectors, we propose an interface for working with them. We propose a metal-oxide-semiconductor (MOS) structure as a signal-modulating device. The modulation of the MOS capacitance occurs by modulating illumination through an optically translucent metal contact.
Authors
Babken Semerjyan
(Yerevan State University, Institute of Physics)
Mr
David Kananov
(Yerevan State University, Institute of Physics)
Dr
Mikael Alexanyan
(Yerevan State University, Institute of Physics)
