Speaker
Description
Gallium Nitride (GaN) thin films were deposited on p-type Si (100) substrates using a plasma focus (PF) device, with a view to probing the effect of plasma shot number and post-deposition annealing on their optical and structural properties. The 2, 4, and 6 PF shot exposed films were processed and systematically characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), UV–VIS–NIR spectroscopy, and photoluminescence (PL) measurements.
The results indicated that increasing the number of plasma shots and employing thermal annealing led to substantial improvement in crystallinity, surface morphology, and PL emission peak shifts. The results indicate that the PF method can be used effectively to tailor GaN thin films for optoelectronic devices by varying deposition and annealing parameters.
