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15:00
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Introduction
-
Håkan Wennlöf
(Nikhef National institute for subatomic physics (NL))
Marco Mandurrino
(Universita e INFN Torino (IT))
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15:10
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Updates on Simulations
(until 16:40)
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15:10
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CMOS simulation and connection between device-level and electronics simulations
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15:25
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Other detectors/technologies/activities
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15:40
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Newly measured semiconductor properties
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15:55
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Radiation damage: validation with measurements and development of high-fluence models
- Dr
Joern Schwandt
(Hamburg University (DE))
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16:10
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Time dependent electric/weighting field
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16:25
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Simulation tools development
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16:40
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Discussion and AoB
-
Marco Mandurrino
(Universita e INFN Torino (IT))
Håkan Wennlöf
(Nikhef National institute for subatomic physics (NL))
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