16th WG4 General Meeting

Monday 13 Oct 2025, 15:00 → 17:00 Europe/Zurich

Håkan Wennlöf (Nikhef National institute for subatomic physics (NL)), Marco Mandurrino (Universita e INFN Torino (IT))

Meeting Recording available below:

GMT20251013-130247_Recording_2560x1440.mp4

The meeting opened at 15:00 and closed at 15:30.
The number of attendees was stable at 21 and peaked at 22.

General news:

• The 4th DRD3 week takes place at CERN, 10th to 14th of November: https://indico.cern.ch/event/1581713/
  
  • Abstract submission deadline 19th of October - please consider presenting and submit abstracts as soon as possible
• Collaboration Board chair elections have started; the term is 3 years. The call for nominations are open until the 20th of October, and the election takes place in the week following the DRD3 week

 

Wei Li presented work on Study of irradiation-induced defects in LGADs

• LGAD gain layers degrade under irradiation. The presented work aims to investigate the irradiation-induced defect generation processes in detail, including how carbon doping enhances radiation resistance.
• Simulation performed using primary displacement damage from Geant4, defect evolution via molecular dynamics simulations, then kinetic Monte Carlo simulations to obtain the defect structure at a longer (stable) time scale. TCAD simulations are used to extract the macroscopic electrical characteristics.
• The KMC simulations are a work in progress, to determine the steady-state configuration of defects. These simulation results should ideally match experimental results from deep-level transient spectroscopy (DLTS)

Questions and Answers:

• Michael Moll: Does DLTS still work for PIN diodes at those relatively high fluences? Is the capacitance still big enough for a reliable measurement? Diode-like behaviour is required. Did you measure the capacitance vs temperature?

 

 

The conveners will announce the time for the next meeting via email.

Please get in touch if you wish to give a longer presentation.

 

 

1 Introduction

Speakers: Marco Mandurrino (Universita e INFN Torino (IT)), Håkan Wennlöf (Nikhef National institute for subatomic physics (NL))

wg4_updates_251013.pdf

Updates on Simulations

2 CMOS simulation and connection between device-level and electronics simulations

monolithic sensor simulations - front-end electronics simulations - signal read-out and processing

3 Other detectors/technologies/activities

hybrid sensors (LGADs, 3D, strip detectors, …) - process simulation - particle-matter interaction - charge carrier transport

4 Newly measured semiconductor properties

non-silicon sensors simulation - gain layer/impact ionisation simulation

5 Radiation damage: validation with measurements and development of high-fluence models

definition of benchmark models - high-fluence models - radiation environment simulations

Speaker: Wei Li (Institute of High Energy Physics)

20251013_Wei_LI_1.4.pdf

6 Time dependent electric/weighting field

adaptive fields - signal formation in detectors with resistive electrodes - charge transport

7 Simulation tools development

integration of simulation tools - machine learning

8 Discussion and AoB

Speakers: Håkan Wennlöf (Nikhef National institute for subatomic physics (NL)), Marco Mandurrino (Universita e INFN Torino (IT))