29 February 2012 to 2 March 2012
Jozef Stefan Institute
Europe/Zurich timezone

Measurements of highly irradiated ATLAS n+-in-n planar pixel sensors

1 Mar 2012, 11:35
25m
Main Lecture Hall (Jozef Stefan Institute)

Main Lecture Hall

Jozef Stefan Institute

Jamova 39, Ljubljana, Slovenia

Speaker

Mr Andre Rummler (Technische Universitaet Dortmund (DE))

Description

ATLAS plans a full replacement of its inner tracker after the end of this decade to cope with luminosities of up to 10E35 cm-2 s-1 at HLLHC. Here, the innermost pixel layer will have to withstand a radiation damage of 2E16 n_eq cm-2. During the last three years lab characterisation of n+-in-n sensors highly irradiated with neutrons and protons as well as several test beam campaigns were conducted, using irradiated and unirradiated readout electronics. Results of these measurements will be presented. A new dedicated test structure (fanout) for measurements of pixel detectors with exchangeable readout electronics will be introduced and first tests will be shown as well. Some time ago it was demonstrated on strip sensors that beyond 2E15 n_eq cm-2 the conventional models are not sufficient to explain their beviour. Highly irradiated silicon pixel sensors show clearly similar effects. In order to clarify this matter interesting results could be gained with test beam measurements at very steep angles. First ideas and progress will be presented.

Author

Mr Andre Rummler (Technische Universitaet Dortmund (DE))

Presentation materials