7th Trento Workshop on Advanced Radiation Detectors (3D and p-type)

Session

3D Detectors

29 Feb 2012, 16:45

Main Lecture Hall (Jozef Stefan Institute)

Conveners

3D Detectors

• Cinzia Da Via (University of Manchester (GB))

3D Detectors

• Gian-Franco Dalla Betta (INFN and University of Trento)

6. Status report on the 3D sensor development @FBK

Maurizio Boscardin (fbk)

29/02/2012, 16:45

We report on the main technological issues related to the optimization of double side 3D detectors for the first production for ATLAS IBL at FBK (Trento, Italy). With respect to the previous versions of this technology we have strongly improved the main electrical properties (i.e. leakage current and breakdown voltage), the yield and the reproducibility. Selected results from the electrical...

3. Double-Sided 3D Silicon Detectors for the High-Luminosity LHC

Christopher Betancourt (Freiburg University)

29/02/2012, 17:10

For the ATLAS upgrade, the inner pixel layers will have to withstand fluences of up to 2E16 1MeV neq/cm^2. 3D detectors have been shown to be very radiation tolerant, and have been proposed as an option for the inner pixel layers for the ATLAS upgrade. This work presents studies done on double sided 3D strip detectors. Charge collection and noise measurements are presented before and after...

5. Surface effects in double-sided silicon 3D sensors fabricated at FBK

Prof. Gian-Franco Dalla Betta (INFN and University of Trento)

29/02/2012, 17:35

Surface effects were found to significantly affect the electrical characteristics of double-sided 3D detectors fabricated at FBK. With reference to 3D test diodes, we have studied the layout dependence of some critical parameters such as leakage current, breakdown voltage and capacitance both experimentally and with the aid of TCAD simulations. Simulations are found to accurately reproduce...

26. Status production of 3D at CNM

Giulio Pellegrini (Universidad de Valencia (ES))

01/03/2012, 14:30

Silicon detectors with cylindrical electrodes (so called 3D detectors) offer advantages over standard planar photodiodes as more radiation hard radiation sensors. 3D detectors with the double sided geometry have been fabricated at IMB-CNM clean room facilities. The layouts will fit the new pixelated readout chip FE-I4 developed by Atlas collaboration. The technology and the electrical...

19. Overview of the 3D Pixel sensors: recents laboratory measurements for the ATLAS Insertable B-Layer (IBL)

Andrea Micelli (Universita degli Studi di Udine (IT))

01/03/2012, 14:55

3D Silicon Pixel sensors fabricated at FBK-irst and at CNM with Double-side Double Type Column approach with full pass through columns electrodes have been irradiated and tested in laboratory. We will present an overview of the recent results from laboratory tests obtained with devices non irradiated and irradiated with protons up to 5x10^15 neq/cm^2

0. Analysis of Edge and Surface TCTs for Irradiated 3D Silicon Strip Detectors.

Graeme Douglas Stewart (University of Glasgow)

01/03/2012, 15:20

We performed edge and surface TCT measurements of a double sided 3D silicon strip detector at the Jozef Stefan Institute. Double sided 3D devices are a useful counterpart to traditional planar devices. The TCT techniques allow the electric fields in 3D devices to be probed in a way not possible before. The strip detectors had a substrate thickness of 300 micrometers and a strip pitch of...