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Description
MALTA2 is a monolithic active pixel sensor, developed in 180 nm CMOS technology for radiation-hard applications in high-rate environments. This contribution summarizes recent progress on the MALTA2 sensor characterization and simulation developments. Test-beam measurements at the CERN SPS are used to study hit efficiency, charge collection, and timing performance before and after irradiation up to $5\times10^{15} \mathrm{n_{eq}/cm^{2}}$.
In addition, Edge-TCT measurements of the MALTA2 sensor on epitaxial silicon have been performed using both analog and digital readout. The front-end time-walk is characterized with dedicated analog monitoring pixels. For the first time, the charge collection is studied through digital Edge-TCT, reconstructing charge solely from binary hit data. The digital readout gives access to the full edge of the pixel matrix instead of just the monitoring pixels. Combined with test-beam measurements, these studies result in a 3D pixel parameterization of the charge collection.
The measured sensor response serves as input to a fast parametric pixel simulation developed for chip design optimization and system-level studies. Applications of the resulting simulation model to MALTA2 detector studies are discussed.