Jun 13 – 15, 2012
LAL Orsay
Europe/Paris timezone

Simulation of Silicon Photomultipliers

Jun 13, 2012, 11:55 AM
Amphithéâtre Pierre Lehmann (LAL Orsay)

Amphithéâtre Pierre Lehmann

LAL Orsay

Centre Scientifique d'Orsay - Bat 200 91898 Orsay cedex FRANCE
Oral presentation SiPM


Patrick Eckert


In this talk a generic framework for the simulation of the response of Silicon Photomultipliers (SiPMs) is presented. The framework allows a custom definition of the SiPM parameters and geometry and provides a detailed model of the SiPM response. The simulation generates the signal charge and pulse shape for arbitrary incident light pulse distributions and the specified SiPM properties which can be determined from basic characterisation measurements. The simulation has been validated in the full dynamic range for a Hamamatsu MPPC with 100 pixels and was used to study the effect of optical cross-talk and after-pulsing on the response curve and the photon-counting resolution.

Primary author


Hans-Christian Schultz-Coulon (Ruprecht-Karls-Universitaet Heidelberg (DE)) Rainer Stamen (Ruprecht-Karls-Universitaet Heidelberg (DE))

Presentation materials