|
3:00 PM
|
Introduction
-
Marco Mandurrino
(Universita e INFN Torino (IT))
Håkan Wennlöf
(Nikhef National institute for subatomic physics (NL))
|
|
3:10 PM
|
Updates on Simulations
(until 4:40 PM)
|
|
3:10 PM
|
CMOS simulation and connection between device-level and electronics simulations
|
|
3:25 PM
|
Other detectors/technologies/activities
- Dr
Timo Hannu Tapani Peltola
(Texas Tech University (US))
|
|
3:40 PM
|
Newly measured semiconductor properties
|
|
3:55 PM
|
Radiation damage: validation with measurements and development of high-fluence models
|
|
4:10 PM
|
Time dependent electric/weighting field
|
|
4:25 PM
|
Simulation tools development
|
|
4:40 PM
|
Discussion and AoB
-
Håkan Wennlöf
(Nikhef National institute for subatomic physics (NL))
Marco Mandurrino
(Universita e INFN Torino (IT))
|