7–11 May 2012
Danfords Hotel & Marina
EST timezone

Evolution of High Power LDMOS Transistors at NXP

9 May 2012, 08:00
45m
Danfords Hotel & Marina

Danfords Hotel & Marina

Port Jefferson, New York, USA

Speaker

Scott Blum (N)

Description

This presentation will discuss the evolution of high power transistors at NXP Semiconductors. It will focus on the technology specific to the frequency bands most utilized by the accelerator community. It will show the improvements in performance, and what those improvements can bring to the design community. Finally, future roadmaps will be shown. This will be a platform to start discussions with the design community about what trends can most help them leverage solid state technology for their amplifier needs in the future.

Author

Presentation materials