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Seventh CW and High Average Power RF Workshop

7–11 May 2012
Danfords Hotel & Marina
EST timezone

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Session

Session 3, hot topic, SSA

9 May 2012, 08:00
Danfords Hotel & Marina

Danfords Hotel & Marina

Port Jefferson, New York, USA

Conveners

Session 3, hot topic, SSA

  • Jorn Jacob (ESRF)

Presentation materials

There are no materials yet.

  1. 16. Evolution of High Power LDMOS Transistors at NXP
    Scott Blum (N)
    09/05/2012, 08:00
    This presentation will discuss the evolution of high power transistors at NXP Semiconductors. It will focus on the technology specific to the frequency bands most utilized by the accelerator community. It will show the improvements in performance, and what those improvements can bring to the design community. Finally, future roadmaps will be shown. This will be a platform to start...
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  2. 26. High power RF amplifiers using LDMOS technology
    Mr Yicih (Dave) Zhang (Freescale Semiconductors)
    09/05/2012, 08:45
    This presentation will cover Freescale high power RF amplifiers using LDMOS technology, and some its advantage it brings over traditional technologies. It will also cover topics regarding design support, thermal characterization and ruggedness/reliability. Presentation will conclude with an outlook on future trends of LDMOS RF amplifiers.
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  3. 42. reserve for discussion
    09/05/2012, 09:30
  4. 17. 150kW SSA for ESRF Booster Upgrade
    Jean-Paul ABADIE (ELTA-AREVA)
    09/05/2012, 10:00
    Oral
    In the frame of ESRF Booster Upgrade, ELTA-AREVA has designed and provided four 150kW Amplifier at 352 MHz, based on Solid State Amplifier technology. The presentation describes main features and performances of the 150 kW SSA that have been qualified on fictive terminations and have been recently connected to Booster cavities. The SSA is based on 650W LDMOS Power Amplifier Modules,...
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