Description
6 talks
Mr
Doug Horan
(Argonne National Laboratory)
3/25/08, 2:00 PM
The Advanced Photon Source (APS) utilizes five 350-MHz/1MW CW klystrons to supply rf power to a 7GeV Booster-Synchrotron and Storage Ring. The performance of these klystrons during the last two years of APS operation will be discussed, along with troubleshooting techniques used to identify klystron-related problerms that interfere with accelerator operation.
Mr
Eric Montesinos
(CERN)
3/25/08, 2:40 PM
CERN SPS 200MHz power amplifier, 4x1MW, tetrodes 125kW, tetrodes 35kW, long time (25yr) operation statistics, experience...
Mr
Jean-Maurice MERCIER
(ESRF), Dr
Jörn JACOB
(ESRF)
3/25/08, 3:20 PM
A ten year upgrade programme has been set up at the ESRF to enhance its scientific capabilities for new research by renewing X-ray beam lines, their instrumentation and the X-ray source. As part of this programme, the photon flux and brilliance of the source will be increased by means of longer insertion device straight sections, a higher electron beam current, a reduced vertical emittance and...
Mr
Patrick Marchand
(SOLEIL synchrotron)
3/25/08, 4:15 PM
The 352 MHz RF accelerating systems for the SOLEIL booster and storage ring are in operation since mid 2006. In the booster, a 5-cell copper cavity of the CERN-LEP type is powered with a 35 kW solid state amplifier. In the storage ring, the required RF accelerating voltage (up to 4.4 MV) and power (560 kW at full beam current of 500 mA) will be provided by two cryomodules, each containing a...
Mr
marcos gaspar
(Paul Scherrer Institut)
3/25/08, 4:55 PM
We present a progress report about the commissioning and construction of our first 4.5KW Solid State Power Amplifier Prototype. We show how the expansion up to much higher power will be made based in our modular approach. A brief description of the design and performance of the basic components and some preliminary results will also be presented.
Mr
Alfred Fox
(Research Center Juelich)
3/25/08, 5:35 PM
High Power and high temperature electronics applications is one of the reasons for the enormous effort and progress which has been made in the development of III-nitride semiconductor material. A lot of investigations were done with regard to DC/RF dispersion since it influences the RF-performance of devices extremely. Significant performance improvement was achieved by application of a...