Name: 22nd RD50 Workshop (Albuquerque, USA)
Start: 2013-06-03T08:00:00-06:00
End: 2013-06-05T17:00:00-06:00
Location: University of New Mexico

22nd RD50 Workshop (Albuquerque, USA)

from Monday 3 June 2013 (08:00) to Wednesday 5 June 2013 (17:00)

Monday 3 June 2013
09:00 Opening & Defect and Material Characterization
Opening & Defect and Material Characterization
09:00 - 14:00
Room: Student Union Building
Contributions

09:00 Workshop opening - Michael Moll (CERN) Sally Seidel (University of New Mexico (US)) Wolfgang Rudolph (Chair, Dept. of Physics and Astronomy, University of New Mexico)

09:20 Radiation-Induced Trap Spectroscopy in Si Bipolar Transistors and GaAs Diodes - Robert M. Fleming (Sandia National Laboratories, , Albuquerque, NM 87185)

10:20 Studies on n-type silicon after electron irradiation - Roxana Radu (University of Hamburg)

10:40 Evolution of carrier lifetime characteristics in Si structures during and post-irradiated by neutrons and protons - Juozas Vaitkus (Vilnius University)

11:00 Radiation damage induced by 800 MeV protons in silicon pad diodes - Sinan Sagir (Brown University (US))

11:20 Systematic investigation of p-irradiated Micron pad detectors of different silicon materials - Hannes Neugebauer (Hamburg University (DE))

11:40 Extraction of electric field of non-irradiated microstrip detectors using the edge-TCT technique - Marcos Fernandez Garcia (Universidad de Cantabria (ES))

12:00 Discussion on Defects and Material Characterization - Michael Moll (CERN)
14:00
14:00 - 17:00
Room: Student Union Building
Contributions

14:00 Radiation Damage of the ATLAS Pixel Sensors Using Leakage Current Measurement System - Igor Gorelov (University of New Mexico (US))

14:30 Status of radiation effects of the ATLAS SCT detector - Taka Kondo (High Energy Accelerator Research Organization (JP))

15:30 Radiation damage effects in the LHCb Vertex Locator - Zhou Xing (Syracuse University (US))

16:00 Summary of the session - Konstantin Toms (University of New Mexico (US))
17:00

17:00 - 18:00
Room: Student Union Building

18:30

18:30 - 20:30
Room: UNM Faculty and Staff Club
Tuesday 4 June 2013
09:00 Simulations and Charge Multiplication
Simulations and Charge Multiplication
09:00 - 14:00
Room: Student Union Building
Contributions

09:00 Simulation of Double Junction in Irradiated Detectors Using Silvaco TCAD - Maria Golovleva (Lappeenranta Univ. of Technology)

09:20 Simulation of CV, TCT and CCE with an effective 2-defect model (moved to Wednesday) - Robert Eber (KIT - Karlsruhe Institute of Technology (DE))

09:25 p-n-n+ diode CV characteristics changes at various contract and body doping concentrations. TCAD simulations - Juozas Vaitkus (Vilnius University (LT))

09:40 Simulations of edge-TCT and 2-defect model CCE - Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

10:30 Simulation and Technology developments of Low Gain Avalanche Detectors (LGAD) for High Energy Physics applications - Salvador Hidalgo (Centro Nacional de Microelectrónica (IMB-CNM-CSIC))

10:45 Red TCT measurements of Low Gain Avalanche Diodes (LGAD) produced at CNM-Barcelona - Marcos Fernandez Garcia (Universidad de Cantabria (ES))

11:00 Simulation of Gain-Optimized Sensors - Colin Parker (University of California, Santa Cruz (US))

11:20 Pulse shapes of alpha particles in CNM diodes with and without gain - Scott Ely (SCIPP)

11:40 Studies of CNM diodes with gain - Gregor Kramberger (Jozef Stefan Institute (SI))

12:00 Combined Measurement Results of dedicated RD50 Charge Multiplication Sensors - Sven Wonsak (University of Liverpool (GB))

12:20 Ultra-Fast Silicon Sensors based on Charge Multiplication, an Update - Hartmut Sadrozinski (SCIPP, UC santa Cruz)
14:00 Charge Multiplication and 3D sensors
Charge Multiplication and 3D sensors
14:00 - 18:00
Room: Student Union Building
Contributions

14:00 Investigation of charge multiplication in silicon strip detectors - Robert Eber (KIT - Karlsruhe Institute of Technology (DE))

14:20 Status of RD50 Common projects coordinated by CNM - Giulio Pellegrini (Universidad de Valencia (ES))

14:30 Discussion on Charge Multiplication - Giulio Pellegrini (Universidad de Valencia (ES))

14:50 First measurements of 3D strip detectors irradiated at 10*17 n/cm2 - Virginia Greco (Centro Nacional Microelectronica (IMB-CNM-CSIC))

15:10 A Systematic 3D Simulation Study Comparing BNL’s 3D-Trench Electrode Detectors with Conventional 3D Detectors and Initial Electrical Test Results of the First Prototype Batch - Alyssa Montalbano (State University of New York (US))

16:00 Recent Results of the 3D-Stripixel Si Detectors - Zheng Li (BNL)

16:20 Status of Scribe-Cleave-Passivate (SCP) Slim Edge Technology - Vitaliy Fadeyev (University of California,Santa Cruz (US))

16:40 Progress on the Low Resistance Strip Sensors and Slim Edges Combined RD50 Project - Victor Hugo Benitez Casma (Universidad de Valencia (ES))

17:00 TCT measurements with SCP slim edge strip detectors - Igor Mandic (Jozef Stefan Institute (SI))

17:20 Discussion on 3D sensors and slim edges - Giulio Pellegrini (Universidad de Valencia (ES))
18:00
18:00 - 23:20
Room: Student Union Building
Contributions

18:00 Bus leaving from Popejoy Hall

18:20 Banquet at Los Poblanos Historic Inn
Wednesday 5 June 2013
09:00
09:00 - 13:00
Room: Student Union Building
Contributions

09:00 Irradiation study of different silicon materials for the CMS tracker upgrade - Joachim Erfle (Hamburg University (DE))

09:20 Test beam results from CMS strip sensor upgrade studies - Lenny Spiegel (Fermi National Accelerator Lab. (US))

09:40 Long-term Charge Collection Efficiency (CCE) measurements on multi-geometry strip sensors - Alex Edward Garabedian (Brown University (US))

10:00 Studies of thin irradiated n-in-p planar pixel sensor at different beam incidence and characterization of the new CiS n-in-p pixel production - Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

10:50 Characterization of active edge planar pixels produced at VTT before and after irradiation - Anna Macchiolo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

11:10 A Portable Telescope Based on the Alibava System for Test Beam Studies - Dean Charles Forshaw (University of Liverpool (GB))

11:30 Silicon Sensors Irradiation Study for ILC Extreme Forward Calorimetry - Vitaliy Fadeyev (University of California,Santa Cruz (US))

11:50 Performance of capacitively coupled active pixel sensors in 180 nm HV CMOS technology irradiated to HL-LHC fluences - Daniel Muenstermann (Universite de Geneve (CH))

12:10 Semiconductor Detectors as Radiation Monitors - Ulrich Parzefall (Albert-Ludwigs-Universitaet Freiburg (DE))

12:30 Discussion on Full Detector Systems - Gregor Kramberger (Jozef Stefan Institute (SI))

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