Conveners
Cooling, Interconnections, Radiation Tolerance
- Markus Keil (CERN)
Oscar Augusto De Aguiar Francisco
(Univ. Federal do Rio de Janeiro (BR))
04/09/2014, 14:00
ORAL
The LHCb Vertex Detector (VELO) will be upgraded in 2018 to a lightweight, pixel detector capable of 40 MHz readout and operation in very close proximity to the LHC beams. The thermal management of the system will be provided by evaporative CO2 circulating in micro channels embedded within thin silicon plates. This solution has been selected due to the excellent thermal efficiency, the...
Mohsine Menouni
(Centre National de la Recherche Scientifique (FR))
04/09/2014, 14:30
ORAL
This talk will review progress and status of testing of deep submicron CMOS technology for tolerance to radiation with total ionizing dose up to 1Grad, and also for tolerance to single event effects. Multiple prototypes have been fabricated and tested with x-rays, gamma rays, and protons. Devices tested range from single transistors to full circuits. A summary of results obtained so far will...
Marko Mikuz
(Jozef Stefan Institute (SI))
04/09/2014, 15:00
ORAL
Raising the electric field so as to provoke charge multiplication of electrons has enabled silicon to provide measurable signals from sensors irradiated to unprecedented radiation levels up to 1.6x10^17 n_eq/cm^2, making it a contender also for HL-LHC very forward tracking and calorimneters. A simple scaling of collected charge vs. applied bias has been established experimentally for fluences...
Gianluigi Casse
(University of Liverpool (GB))
04/09/2014, 15:30
ORAL
The CERN/RD50 collaboration is dedicated to the radiation hardening of semiconductor sensors for future super-collider needs. It is therefore natural that the findings of our collaboration in this field are relevant to the pixel devices for the LHC experiment upgrades. A summary of the consistent amount of results on radiation tolerance enhancement of silicon sensors from RD50 will be...
Makoto Motoyoshi
(Tohoku-MincroTec Co., Ltd (T-Micro))
04/09/2014, 16:20
ORAL
Abstract
A 3D IC is an effective solution for reducing the manufacturing costs of advanced 2D LSI while ensuring equivalent device performance and functionalities. This technology allows a new device architecture of stacked detectors/sensor devices with a small dead sensor area and facilitates hyper-parallel data processing. In pixel detectors or image sensor devices, many transistors are...
Robert Patti
(Tezzaron Semiconductor Corp.)
04/09/2014, 16:50
ORAL
The term 3D integrated circuit covers a wide swath of technologies today. It can mean anything from chip stacking to interposers or “2.5D integration”, to TSV’d wafer stacking or even the latest bleeding edge technology push into monolithic 3D devices. No matter which type, with scaling’s advantages rapidly eroding, 3D integrated circuits appear to be gaining traction in the market.
Most...
Aliaksandr Pranko
(Lawrence Berkeley National Lab. (US))
04/09/2014, 17:20
ORAL
Extensive discussions are underway to refine the physics goals and scope of detector upgrades for the future LHC runs, following the Higgs boson discovery. New opportunities for improving performance of the ATLAS and CMS tracking detectors in the very forward region are of particular interest to future Higgs and other measurements, which are central to the ATLAS and CMS physics programs. We...
