Speaker
Panja Luukka
(Helsinki Institute of Physics HIP)
Description
Radiation hardness up to 1×10 16 cm−2 is required in the future HEP
experiments. This is well beyond the radiation tolerance of even the most
advanced semiconductor detectors fabricated by commonly adopted
technologies. The Current Injected Detector (CID) is a concept where the
current is limited by the space charge. The injected carriers will be trapped
by the deep levels. This induces a stable electric field through the entire bulk
regardless of the irradiation fluence the detector has been exposed. The
steady state density of the trapped charge is defined by the balance between
the trapping and emission rates of charge carriers (detrapping). Thus, the
amount of charge injection needed for electric field stabilation depends on
the temperature. The threshold voltage of the space charge saturation (VT )
is proportional to the irradiation fluence. The VT increases with respect of
irradiation fluence extending the range of operation voltage.
Author
Panja Luukka
(Helsinki Institute of Physics HIP)
Co-author
Vladimir Eremin
(A.F. Ioffe Physical Technical Institute)
