19–24 Feb 2007
Univ. of Technology
Europe/Zurich timezone

Ultimate limits for the radiation hardness of silicon strip detectors for sLHC

Not scheduled
20m
HS1 (Univ. of Technology)

HS1

Univ. of Technology

Wiedner Hauptstrasse 8-10 Vienna, Austria
Board: B24
Poster (Session B)

Speaker

Manuel Lozano (CNM-IMB Barcelona)

Description

The new super-LHC upgrade will impose severe restrictions in the radiation hardness of silicon detectors with maximum foreseen fluence of 10^16 particles/cm^2 in the innermost region. Microstrip detectors have been fabricated in p-type high resistivity float zone silicon at CNM microfabrication facilities and have been irradiated at the TRIGA Mark II reactor in Ljubljana to a fluence of 10^16 neutrons/cm^2 and characterized at IFIC laboratory. The detectors have been characterized in terms of reverse current, full depletion voltage, and total collected charge before and after irradiation. CCE has been measured by infrared laser illumination and ^90Sr beta source, with an energy deposition comparable to minimum ionising particles (mip). The results show that even after this extreme radiation fluence, p-type substrate detectors collect enough charge to induce a measurable signal at -35C with standard readout electronics.

Author

Manuel Lozano (CNM-IMB Barcelona)

Presentation materials