11th Vienna Conference on Instrumentation - VCI 2007

Session

Session 6

s6

21 Feb 2007, 14:00

HS1 (Univ. of Technology)

5. Construction of the CMS silicon strip tracker

Guido Heinrich Dirkes (Institut fuer Experimentelle Kernphysik)

21/02/2007, 14:00

Contributed Talk

In the last year the CMS experiment has constructed and integrated the largest ever build full silicon strip tracker. Therefore the CMS tracker collaboration set up a unique scheme of quality control to ensure the necessary high quality of all of the 15,148 modules and their super structures. The applied scheme of quality control revealed several problems, which escaped the initial R&D...

31. Commissioning of the ATLAS Semiconductor Tracker with Cosmic Rays

Ewa Stanecka (Henryk Niewodniczanski Institute of Nuclear Physics PAN)

21/02/2007, 14:25

Contributed Talk

The Semiconductor Tracker(SCT) of the ATLAS detector enters the last phase of installation and commissioning at CERN. Prior to inserting into ATLAS, the barrel part of the SCT has been integrated with the Transition Radiation Tracker (TRT) barrel and tested with cosmic rays. A sector of 468 SCT modules has been powered and read simultaneously with TRT modules in physics mode. In...

36. The CDF Silicon Detector: Performance and Longevity

Alexandre Pronko (FNAL)

21/02/2007, 14:50

Contributed Talk

The CDF silicon vertex detector is one of the largest operating silicon detectors in particle physics. Its silicon sensors have 722,432 channels read out by 5,456 chips and cover an area of 6 m 2. The detector is used for precision tracking and in the hardware trigger for events with a displaced vertex. It is very important for a success of the CDF physics program. The silicon...

79. Development of Carbon Nanotube radiation detectors

Michelangelo Ambrosio (INFN Napoli)

21/02/2007, 15:15

Contributed Talk

Carbon Nanotubes are one-dimensional structures with diameters ranging between 2 and 100 nm and lengths up to hundreds of microns. They are characterized by a large variety of peculiar characteristics such as a semiconductive or metallic behaviour, a ballistic electrical conductivity and enhanced field emission capabilities. Among these characteristics their sensitivity to the...

76. RD50 Status: Developing radiation tolerant materials for ultra rad-hard tracking detectors

Richard Bates (Glasgow University)

21/02/2007, 16:30

Contributed Talk

The need for ultra-radiation hard semiconductor detectors for the tracker regions in high energy physics experiments at a future high luminosity hadron collider like the LHC Upgrade has led to the formation of the CERN RD50 collaboration. The R&D directions of RD50 follow two paths: understanding radiation effects, and finding mitigation through the use of new materials, device...

74. Signal and Charge Collection Efficiency of a p-type 3D-Detector irradiated to sLHC-Fluences, read out with 40 MHz

Simon Eckert (Universität Freiburg)

21/02/2007, 16:55

Contributed Talk

In view of the projected luminosity upgrade of the LHC, we are studying novel Silicon detectors in terms of their radiation-hardness to be employed as tracking detectors at the sLHC. We have tested 3D-detectors of singletype-column (STC) design, with only n-type columns etched into a p- type substrate. Rows of the columns are connected together to form strips. Using ATLAS SCT...

61. Development of CMOS sensors for future high precision sensitive detectors

Wojciech Dulinski (IReS Strasbourg)

21/02/2007, 17:20

Contributed Talk

CMOS sensors are being developed for various position sensitive detectors requiring high granularity and low material budget, together with relatively fast read-out and good radiation tolerance as well as low power dissipation. A review of the charged particle detection performances achieved with sensors of the MIMOSA series will be provided, emphasizing preliminary test results of...

73. Silicon Drift Detectors for the kaonic atom X-ray measurements in the SIDDHARTA experiment

Tomoichi Ishiwatari (Stefan Meyer Institut f. subat. Phys., Wien)

21/02/2007, 17:45

Contributed Talk

Silicon Drift Detectors (SDDs) are X-ray detectors with the outstanding performance for the measurement of the kaonic atom X-ray lines. The measurement of the kaonic hydrogen/deuterium X-rays with a high background suppression is a crucial issue, because of the small X-ray yields (a few % in kaonic hydrogen and much smaller in kaonic deuterium) and high background usually...

13. R&D for a monolithic pixel sensor based on 150 nm fully-depleted SoI CMOS technology

Toru Tsuboyama (KEK)

21/02/2007, 18:10

Contributed Talk

The effort to develop a monolithic pixel sensor based on the SOI (silicon on insulator) CMOS technology is presented. In SOI, MOS transistors are produced on silicon oxide layer (BOX) above a silicon substrate. A monolithic pixel detector is realized if we adopt a high-resistivity silicon and p-type and n-type implantations can be made in the substrate. The charge induced in the...